A new quasi-3-D subthreshold current/swing model for fully-depleted quadruple-Gate (FDQG) MOSFETs

Hong Wun Gao, Yeong-Her Wang, Ying Wen Ko, Te Kuang Chiang

研究成果: Conference contribution

摘要

Based on the parabolic potential approach (PPA) and equivalent number of gates (ENG), a new quasi-3-D subthreshold current/swing model for the fully depleted quadruple-Gate (FDQG) MOSFET is developed. The model explicitly shows how the channel length, gate oxide thickness, and silicon film thickness affect the subthreshold current/swing behavior. The model is verified by its calculated results matching well with those of the three-dimensional device simulator and can be used to investigate the subthreshold current/swing for the shortchannel QG MOSFETs.

原文English
主出版物標題EDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits
發行者Institute of Electrical and Electronics Engineers Inc.
頁面1-2
頁數2
ISBN(電子)9781538629079
DOIs
出版狀態Published - 2017 12月 1
事件13th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2017 - Hsinchu, Taiwan
持續時間: 2017 10月 182017 10月 20

出版系列

名字EDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits
2017-January

Other

Other13th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2017
國家/地區Taiwan
城市Hsinchu
期間17-10-1817-10-20

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 硬體和架構
  • 電氣與電子工程

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