TY - JOUR
T1 - A nonvolatile InGaZnO charge-trapping-engineered flash memory with good retention characteristics
AU - Su, Nai Chao
AU - Wang, Shui Jinn
AU - Chin, Albert
N1 - Funding Information:
Manuscript received October 15, 2009; revised November 17, 2009. First published January 12, 2010; current version published February 24, 2010. This work was supported in part by the joint project of the National Science Council of Taiwan and the Japan Science and Technology Agency and helped by the National Nano Device Laboratory. The review of this letter was arranged by Editor C.-P. Chang.
Copyright:
Copyright 2010 Elsevier B.V., All rights reserved.
PY - 2010/3
Y1 - 2010/3
N2 - We report an amorphous indium gallium zinc oxide (a-IGZO) thin-film transistor nonvolatile memory (NVM). This NVM shows a large 1.2-V extrapolated ten-year memory window, along with low 10-V/-12-V program/erase voltage, fast 1-ms/100-μs speed, and good endurance. This was achieved using a charge-trap-engineered structure and high-κlayers.
AB - We report an amorphous indium gallium zinc oxide (a-IGZO) thin-film transistor nonvolatile memory (NVM). This NVM shows a large 1.2-V extrapolated ten-year memory window, along with low 10-V/-12-V program/erase voltage, fast 1-ms/100-μs speed, and good endurance. This was achieved using a charge-trap-engineered structure and high-κlayers.
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U2 - 10.1109/LED.2009.2037986
DO - 10.1109/LED.2009.2037986
M3 - Article
AN - SCOPUS:77649153796
SN - 0741-3106
VL - 31
SP - 201
EP - 203
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
IS - 3
M1 - 5378649
ER -