A nonvolatile InGaZnO charge-trapping-engineered flash memory with good retention characteristics

Nai Chao Su, Shui Jinn Wang, Albert Chin

研究成果: Article同行評審

39 引文 斯高帕斯(Scopus)

摘要

We report an amorphous indium gallium zinc oxide (a-IGZO) thin-film transistor nonvolatile memory (NVM). This NVM shows a large 1.2-V extrapolated ten-year memory window, along with low 10-V/-12-V program/erase voltage, fast 1-ms/100-μs speed, and good endurance. This was achieved using a charge-trap-engineered structure and high-κlayers.

原文English
文章編號5378649
頁(從 - 到)201-203
頁數3
期刊IEEE Electron Device Letters
31
發行號3
DOIs
出版狀態Published - 2010 3月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 電氣與電子工程

指紋

深入研究「A nonvolatile InGaZnO charge-trapping-engineered flash memory with good retention characteristics」主題。共同形成了獨特的指紋。

引用此