A novel diac-like switch using double triangular barriers

Kao Feng Yarn, Yeong Her Wang, Chun Yen Chang

研究成果: Article同行評審

摘要

In this study, a new diac-like switch using GaAs double triangular barrier structures (DTBS) prepared by molecular beam epitaxy (MBE) has been fabricated and demonstrated. Unique bidirectional current-voltage (I-V) characteristics between 300 and 77 K were realized for the first time. Large on/off voltage differences and control efficiency were observed in both directions. Based on I-V measurements, the operation mechanism of the diac-like switch was analyzed and is discussed in detail using an equivalent circuit approach. A temperature-dependent effect on the switching voltage, VS, and holding voltage, VH, was also investigated.

原文English
頁(從 - 到)1849-1852
頁數4
期刊Solid State Electronics
37
發行號11
DOIs
出版狀態Published - 1994 11月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 材料化學
  • 電氣與電子工程

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