A Novel Fabricating a Thick Film Cu-Ni Alloy Resistor by Screen Printing an Al Electrode and Galvanic Replacement Reaction

C. R. Kuo, Tzu Chiang Kuo, Wen Hsi Lee

研究成果: Article同行評審

摘要

In this study, a thick film copper-nickel alloy (Cu-Ni alloy) was fabricated by using a novel technique which combines thick film process and galvanic chemical replacement. First, a thick film Al electrode was screen printed and sintered at 600 °C on the aluminum oxide (Al2O3) substrate which served as a reactant. Sequentially, the Al electrode on Al2O3 substrate was immersed into a copper sulfate (CuSO4) solution at 40 °C for 15-30 min to carry out the first galvanic replacement reactions of the partial Al electrode into Cu. After which it was immersed into an NiSO4 solution 80 °C for 15 min to carry out the second galvanic replacement reactions of the remaining Al electrode into Ni to form Cu-Ni layers on the Al2O3 substrate. To make a thick film Cu-Ni alloy, the Cu-Ni layers on Al2O3 substrate were annealed at high temperatures for interdiffusion of Cu and Ni. A thick film Al electrode on an Al2O3 substrate is immersed into a CuSO4(aq) solution at 40 °C for 15 min and sequentially immersed in an NiSO4(aq) solution at 80 °C for 15 min. Then, after further annealing at 800 °C for 30 min in a reducing atmosphere, the Cu and Ni composition ratio in the thick film Cu-Ni alloy is approximately 1:1, reflecting Cu-Ni alloy resistor with a very promising temperature coefficient of resistance (TCR) performance (115 ppm/°C).

原文English
頁(從 - 到)1997-2002
頁數6
期刊IEEE Transactions on Components, Packaging and Manufacturing Technology
11
發行號11
DOIs
出版狀態Published - 2021 11月 1

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 工業與製造工程
  • 電氣與電子工程

指紋

深入研究「A Novel Fabricating a Thick Film Cu-Ni Alloy Resistor by Screen Printing an Al Electrode and Galvanic Replacement Reaction」主題。共同形成了獨特的指紋。

引用此