A novel fabrication of p-n diode based on ZnO nanowire/p-NiO heterojunction

Sheng Po Chang; Chien Yuan Lu; Shoou Jinn Chang; Yu Zung Chiou; Cheng Liang Hsu; Peng Yu Su; Ting Jen Hsueh

doi:10.1143/JJAP.50.01AJ05

A novel fabrication of p-n diode based on ZnO nanowire/p-NiO heterojunction

Sheng Po Chang, Chien Yuan Lu, Shoou Jinn Chang, Yu Zung Chiou, Cheng Liang Hsu, Peng Yu Su, Ting Jen Hsueh

研究成果: Article › 同行評審

11 引文斯高帕斯（Scopus）

摘要

We report the deposition of NiO onto ZnO nanowires prepared on ZnO:Ga/glass templates. With the sputtered NiO, the nanowires became mushroom-like. Experimental results point out that sputtered NiO also formed nanoshells surrounding ZnO nanowires. The p-NiO/n-ZnO heterostructure exhibits rectifying behavior with a sharp turn on at ∼1 V. Furthermore, the current vs voltage characteristic is dominated by spacecharge-limited current (SCLC) at high (1.1 V) forward bias.

原文	English
文章編號	01AJ05
期刊	Japanese journal of applied physics
卷	50
發行號	1 PART 2
DOIs	https://doi.org/10.1143/JJAP.50.01AJ05
出版狀態	Published - 2011 1月

All Science Journal Classification (ASJC) codes

一般工程
一般物理與天文學

存取文件

10.1143/JJAP.50.01AJ05

其它文件與鏈接

引用此

@article{b1e35e61e1ad4719b4d27e3f6f65e503,

title = "A novel fabrication of p-n diode based on ZnO nanowire/p-NiO heterojunction",

abstract = "We report the deposition of NiO onto ZnO nanowires prepared on ZnO:Ga/glass templates. With the sputtered NiO, the nanowires became mushroom-like. Experimental results point out that sputtered NiO also formed nanoshells surrounding ZnO nanowires. The p-NiO/n-ZnO heterostructure exhibits rectifying behavior with a sharp turn on at ∼1 V. Furthermore, the current vs voltage characteristic is dominated by spacecharge-limited current (SCLC) at high (1.1 V) forward bias.",

author = "Chang, {Sheng Po} and Lu, {Chien Yuan} and Chang, {Shoou Jinn} and Chiou, {Yu Zung} and Hsu, {Cheng Liang} and Su, {Peng Yu} and Hsueh, {Ting Jen}",

year = "2011",

month = jan,

doi = "10.1143/JJAP.50.01AJ05",

language = "English",

volume = "50",

journal = "Japanese journal of applied physics",

issn = "0021-4922",

number = "1 PART 2",

}

TY - JOUR

T1 - A novel fabrication of p-n diode based on ZnO nanowire/p-NiO heterojunction

AU - Chang, Sheng Po

AU - Lu, Chien Yuan

AU - Chang, Shoou Jinn

AU - Chiou, Yu Zung

AU - Hsu, Cheng Liang

AU - Su, Peng Yu

AU - Hsueh, Ting Jen

PY - 2011/1

Y1 - 2011/1

N2 - We report the deposition of NiO onto ZnO nanowires prepared on ZnO:Ga/glass templates. With the sputtered NiO, the nanowires became mushroom-like. Experimental results point out that sputtered NiO also formed nanoshells surrounding ZnO nanowires. The p-NiO/n-ZnO heterostructure exhibits rectifying behavior with a sharp turn on at ∼1 V. Furthermore, the current vs voltage characteristic is dominated by spacecharge-limited current (SCLC) at high (1.1 V) forward bias.

AB - We report the deposition of NiO onto ZnO nanowires prepared on ZnO:Ga/glass templates. With the sputtered NiO, the nanowires became mushroom-like. Experimental results point out that sputtered NiO also formed nanoshells surrounding ZnO nanowires. The p-NiO/n-ZnO heterostructure exhibits rectifying behavior with a sharp turn on at ∼1 V. Furthermore, the current vs voltage characteristic is dominated by spacecharge-limited current (SCLC) at high (1.1 V) forward bias.

UR - http://www.scopus.com/inward/record.url?scp=79955165538&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79955165538&partnerID=8YFLogxK

U2 - 10.1143/JJAP.50.01AJ05

DO - 10.1143/JJAP.50.01AJ05

M3 - Article

AN - SCOPUS:79955165538

SN - 0021-4922

VL - 50

JO - Japanese journal of applied physics

JF - Japanese journal of applied physics

IS - 1 PART 2

M1 - 01AJ05

ER -

A novel fabrication of p-n diode based on ZnO nanowire/p-NiO heterojunction

摘要

All Science Journal Classification (ASJC) codes

存取文件

其它文件與鏈接

指紋

引用此