A novel five-channel NMOSFET using selective epitaxial growth (SEG) and lateral solid phase epitaxy (LSPE)

H. Liu, M. Kumar, J. K.O. Sin, W. Jun, K. L. Wang

研究成果: Paper同行評審

摘要

In order to improve the performance of transistors a five-channel (FC) NMOSFET was proposed. The selective epitaxial growth (SEG) and lateral solid phase epitaxy (LSPE) were used in developing new device. The current-voltage characteristics for different channels of the device were also discussed. It was observed that the FC-NMOS provides a current handling capability of 3.6 times higher than conventional NMOS.

原文English
頁面77-78
頁數2
出版狀態Published - 2001
事件2001 IEEE International SOI Conference - Durango, CO, United States
持續時間: 2001 10月 12001 10月 4

Conference

Conference2001 IEEE International SOI Conference
國家/地區United States
城市Durango, CO
期間01-10-0101-10-04

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 電氣與電子工程

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