A novel flash-ion-sensitive field-effect transistor (FISFET) with HfO 2/Gd2O3(Gd) nano-crystal/SiO2 sensing membranes under super nernstian phenomenon for ph and urea detection

Tseng Fu Lu, Jer Chyi Wang, Chao Sung Lai, Chia Ming Yang, Min Hsien Wu, Chuan Pu Liu, Rong Shie Huang, Yu Ching Fang

研究成果: Conference contribution

摘要

An enhanced hydrogen and urea biosensor based on a novel flash-ion-sensitive field-effect transistor (FISFET) with HfO 2/Gd2O3(Gd) nano-crystal/SiO2 sensing membrane is demonstrated experimentally. The super Nernstian phenomenon of hydrogen detection (∼80 mV/pH) is achieved according to the charge trapping effect. The performance of reliability including long-term stability and endurance are systematic studied. For urea detection, the higher sensitivity is obtained (∼20 mV/mM) in the concentration range from 1 to 8 mM.

原文English
主出版物標題2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest
頁面26.4.1-26.4.4
DOIs
出版狀態Published - 2009 12月 1
事件2009 International Electron Devices Meeting, IEDM 2009 - Baltimore, MD, United States
持續時間: 2009 12月 72009 12月 9

出版系列

名字Technical Digest - International Electron Devices Meeting, IEDM
ISSN(列印)0163-1918

Other

Other2009 International Electron Devices Meeting, IEDM 2009
國家/地區United States
城市Baltimore, MD
期間09-12-0709-12-09

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 電氣與電子工程
  • 材料化學

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