A novel flash-ion-sensitive field-effect transistor (FISFET) with HfO 2/Gd2O3(Gd) nano-crystal/SiO2 sensing membranes under super nernstian phenomenon for ph and urea detection

Tseng Fu Lu; Jer Chyi Wang; Chao Sung Lai; Chia Ming Yang; Min Hsien Wu; Chuan Pu Liu; Rong Shie Huang; Yu Ching Fang

doi:10.1109/IEDM.2009.5424289

A novel flash-ion-sensitive field-effect transistor (FISFET) with HfO ₂/Gd₂O₃(Gd) nano-crystal/SiO₂ sensing membranes under super nernstian phenomenon for ph and urea detection

Tseng Fu Lu, Jer Chyi Wang, Chao Sung Lai, Chia Ming Yang, Min Hsien Wu, Chuan Pu Liu, Rong Shie Huang, Yu Ching Fang

研究成果: Conference contribution

摘要

An enhanced hydrogen and urea biosensor based on a novel flash-ion-sensitive field-effect transistor (FISFET) with HfO ₂/Gd₂O₃(Gd) nano-crystal/SiO₂ sensing membrane is demonstrated experimentally. The super Nernstian phenomenon of hydrogen detection (∼80 mV/pH) is achieved according to the charge trapping effect. The performance of reliability including long-term stability and endurance are systematic studied. For urea detection, the higher sensitivity is obtained (∼20 mV/mM) in the concentration range from 1 to 8 mM.

原文	English
主出版物標題	2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest
頁面	26.4.1-26.4.4
DOIs	https://doi.org/10.1109/IEDM.2009.5424289
出版狀態	Published - 2009
事件	2009 International Electron Devices Meeting, IEDM 2009 - Baltimore, MD, United States 持續時間: 2009 12月 7 → 2009 12月 9

出版系列

名字	Technical Digest - International Electron Devices Meeting, IEDM
ISSN（列印）	0163-1918

Other

Other	2009 International Electron Devices Meeting, IEDM 2009
國家/地區	United States
城市	Baltimore, MD
期間	09-12-07 → 09-12-09

All Science Journal Classification (ASJC) codes

電子、光磁材料
凝聚態物理學
電氣與電子工程
材料化學

存取文件

10.1109/IEDM.2009.5424289

其它文件與鏈接

引用此

Lu, T. F., Wang, J. C., Lai, C. S., Yang, C. M., Wu, M. H., Liu, C. P., Huang, R. S., & Fang, Y. C. (2009). A novel flash-ion-sensitive field-effect transistor (FISFET) with HfO ₂/Gd₂O₃(Gd) nano-crystal/SiO₂ sensing membranes under super nernstian phenomenon for ph and urea detection. 於 2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest (頁 26.4.1-26.4.4). 文章 5424289 (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2009.5424289

Lu, Tseng Fu ; Wang, Jer Chyi ; Lai, Chao Sung 等. / A novel flash-ion-sensitive field-effect transistor (FISFET) with HfO ₂/Gd₂O₃(Gd) nano-crystal/SiO₂ sensing membranes under super nernstian phenomenon for ph and urea detection. 2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest. 2009. 頁 26.4.1-26.4.4 (Technical Digest - International Electron Devices Meeting, IEDM).

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title = "A novel flash-ion-sensitive field-effect transistor (FISFET) with HfO 2/Gd2O3(Gd) nano-crystal/SiO2 sensing membranes under super nernstian phenomenon for ph and urea detection",

abstract = "An enhanced hydrogen and urea biosensor based on a novel flash-ion-sensitive field-effect transistor (FISFET) with HfO 2/Gd2O3(Gd) nano-crystal/SiO2 sensing membrane is demonstrated experimentally. The super Nernstian phenomenon of hydrogen detection (∼80 mV/pH) is achieved according to the charge trapping effect. The performance of reliability including long-term stability and endurance are systematic studied. For urea detection, the higher sensitivity is obtained (∼20 mV/mM) in the concentration range from 1 to 8 mM.",

author = "Lu, {Tseng Fu} and Wang, {Jer Chyi} and Lai, {Chao Sung} and Yang, {Chia Ming} and Wu, {Min Hsien} and Liu, {Chuan Pu} and Huang, {Rong Shie} and Fang, {Yu Ching}",

year = "2009",

doi = "10.1109/IEDM.2009.5424289",

language = "English",

isbn = "9781424456406",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

pages = "26.4.1--26.4.4",

booktitle = "2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest",

note = "2009 International Electron Devices Meeting, IEDM 2009 ; Conference date: 07-12-2009 Through 09-12-2009",

}

Lu, TF, Wang, JC, Lai, CS, Yang, CM, Wu, MH, Liu, CP, Huang, RS & Fang, YC 2009, A novel flash-ion-sensitive field-effect transistor (FISFET) with HfO ₂/Gd₂O₃(Gd) nano-crystal/SiO₂ sensing membranes under super nernstian phenomenon for ph and urea detection. 於 2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest., 5424289, Technical Digest - International Electron Devices Meeting, IEDM, 頁 26.4.1-26.4.4, 2009 International Electron Devices Meeting, IEDM 2009, Baltimore, MD, United States, 09-12-07. https://doi.org/10.1109/IEDM.2009.5424289

A novel flash-ion-sensitive field-effect transistor (FISFET) with HfO ₂/Gd₂O₃(Gd) nano-crystal/SiO₂ sensing membranes under super nernstian phenomenon for ph and urea detection. / Lu, Tseng Fu; Wang, Jer Chyi; Lai, Chao Sung 等.
2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest. 2009. p. 26.4.1-26.4.4 5424289 (Technical Digest - International Electron Devices Meeting, IEDM).

研究成果: Conference contribution

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AU - Lu, Tseng Fu

AU - Wang, Jer Chyi

AU - Lai, Chao Sung

AU - Yang, Chia Ming

AU - Wu, Min Hsien

AU - Liu, Chuan Pu

AU - Huang, Rong Shie

AU - Fang, Yu Ching

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AB - An enhanced hydrogen and urea biosensor based on a novel flash-ion-sensitive field-effect transistor (FISFET) with HfO 2/Gd2O3(Gd) nano-crystal/SiO2 sensing membrane is demonstrated experimentally. The super Nernstian phenomenon of hydrogen detection (∼80 mV/pH) is achieved according to the charge trapping effect. The performance of reliability including long-term stability and endurance are systematic studied. For urea detection, the higher sensitivity is obtained (∼20 mV/mM) in the concentration range from 1 to 8 mM.

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T3 - Technical Digest - International Electron Devices Meeting, IEDM

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Lu TF, Wang JC, Lai CS, Yang CM, Wu MH, Liu CP 等. A novel flash-ion-sensitive field-effect transistor (FISFET) with HfO ₂/Gd₂O₃(Gd) nano-crystal/SiO₂ sensing membranes under super nernstian phenomenon for ph and urea detection. 於 2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest. 2009. p. 26.4.1-26.4.4. 5424289. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM.2009.5424289