A novel InP/InGaAs TEBT for ultralow current operations

Chun Yuan Chen, Shiou Ying Cheng, Wen Hui Chiou, Hung Ming Chuang, Wen Chau Liu

研究成果: Letter同行評審

8 引文 斯高帕斯(Scopus)

摘要

A novel InP/InGaAs tunneling emitter bipolar transistor (TEBT) is fabricated and demonstrated. The studied device exhibits a very small collector-emitter offset voltage of 40 mV and an extremely wide operation regime. The operation region is larger than 11 decades in magnitude of collector current (10-12 to 10-1 A). A current gain of 3 is obtained even the device is operated at an ultralow collector current of 3.9 × 10-12 A (1.56 × 10-7 A/cm2). Furthermore, the common-emitter breakdown voltage of the studied device is higher than 2 V. Consequently, the studied device shows a promise for low supply voltage, and low-power consumption circuit applications.

原文English
頁(從 - 到)126-128
頁數3
期刊IEEE Electron Device Letters
24
發行號3
DOIs
出版狀態Published - 2003 三月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 電氣與電子工程

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