A novel InP/InGaAs TEBT for ultralow current operations

Chun Yuan Chen; Shiou Ying Cheng; Wen Hui Chiou; Hung Ming Chuang; Wen Chau Liu

doi:10.1109/LED.2003.809529

A novel InP/InGaAs TEBT for ultralow current operations

Chun Yuan Chen, Shiou Ying Cheng, Wen Hui Chiou, Hung Ming Chuang, Wen Chau Liu

微電子工程研究所

研究成果: Letter › 同行評審

8 引文斯高帕斯（Scopus）

摘要

A novel InP/InGaAs tunneling emitter bipolar transistor (TEBT) is fabricated and demonstrated. The studied device exhibits a very small collector-emitter offset voltage of 40 mV and an extremely wide operation regime. The operation region is larger than 11 decades in magnitude of collector current (10^-12 to 10^-1 A). A current gain of 3 is obtained even the device is operated at an ultralow collector current of 3.9 × 10^-12 A (1.56 × 10^-7 A/cm²). Furthermore, the common-emitter breakdown voltage of the studied device is higher than 2 V. Consequently, the studied device shows a promise for low supply voltage, and low-power consumption circuit applications.

原文	English
頁（從 - 到）	126-128
頁數	3
期刊	IEEE Electron Device Letters
卷	24
發行號	3
DOIs	https://doi.org/10.1109/LED.2003.809529
出版狀態	Published - 2003 3月

All Science Journal Classification (ASJC) codes

電子、光磁材料
電氣與電子工程

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10.1109/LED.2003.809529

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title = "A novel InP/InGaAs TEBT for ultralow current operations",

abstract = "A novel InP/InGaAs tunneling emitter bipolar transistor (TEBT) is fabricated and demonstrated. The studied device exhibits a very small collector-emitter offset voltage of 40 mV and an extremely wide operation regime. The operation region is larger than 11 decades in magnitude of collector current (10-12 to 10-1 A). A current gain of 3 is obtained even the device is operated at an ultralow collector current of 3.9 × 10-12 A (1.56 × 10-7 A/cm2). Furthermore, the common-emitter breakdown voltage of the studied device is higher than 2 V. Consequently, the studied device shows a promise for low supply voltage, and low-power consumption circuit applications.",

author = "Chen, {Chun Yuan} and Cheng, {Shiou Ying} and Chiou, {Wen Hui} and Chuang, {Hung Ming} and Liu, {Wen Chau}",

note = "Funding Information: Manuscript received November 8, 2002; revised December 12, 2002. This work was supported in part by the National Science Council of Taiwan, R.O.C., under Contract NSC 90-2215-E006-021. The review of this letter was arranged by Editor D. Ueda.",

year = "2003",

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doi = "10.1109/LED.2003.809529",

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AU - Chen, Chun Yuan

AU - Cheng, Shiou Ying

AU - Chiou, Wen Hui

AU - Chuang, Hung Ming

AU - Liu, Wen Chau

N1 - Funding Information: Manuscript received November 8, 2002; revised December 12, 2002. This work was supported in part by the National Science Council of Taiwan, R.O.C., under Contract NSC 90-2215-E006-021. The review of this letter was arranged by Editor D. Ueda.

PY - 2003/3

Y1 - 2003/3

N2 - A novel InP/InGaAs tunneling emitter bipolar transistor (TEBT) is fabricated and demonstrated. The studied device exhibits a very small collector-emitter offset voltage of 40 mV and an extremely wide operation regime. The operation region is larger than 11 decades in magnitude of collector current (10-12 to 10-1 A). A current gain of 3 is obtained even the device is operated at an ultralow collector current of 3.9 × 10-12 A (1.56 × 10-7 A/cm2). Furthermore, the common-emitter breakdown voltage of the studied device is higher than 2 V. Consequently, the studied device shows a promise for low supply voltage, and low-power consumption circuit applications.

AB - A novel InP/InGaAs tunneling emitter bipolar transistor (TEBT) is fabricated and demonstrated. The studied device exhibits a very small collector-emitter offset voltage of 40 mV and an extremely wide operation regime. The operation region is larger than 11 decades in magnitude of collector current (10-12 to 10-1 A). A current gain of 3 is obtained even the device is operated at an ultralow collector current of 3.9 × 10-12 A (1.56 × 10-7 A/cm2). Furthermore, the common-emitter breakdown voltage of the studied device is higher than 2 V. Consequently, the studied device shows a promise for low supply voltage, and low-power consumption circuit applications.

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DO - 10.1109/LED.2003.809529

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EP - 128

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 3

ER -

A novel InP/InGaAs TEBT for ultralow current operations

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