A Novel Pt/In0.52Al0.48 As Schottky idode-type hydrogen sensor

C. W.Ching Wen Hung, Han Lien Lin, Huey-Ing Chen, Yan Ying Tsai, Po Hsien Lai, Ssu I. Fu, Wen-Chau Liu

研究成果: Article同行評審

36 引文 斯高帕斯(Scopus)


On the basis of a Pt/In0.52Al0.48As metal-semiconductor structure, a novel hydrogen sensor is fabricated and demonstrated. The studied Pt/In0.52Al0.48As Schottky diode-type hydrogen sensor exhibits significant sensing performance including high relative sensitivity ratio of about 2600% (under the 1% H2/air gas and VR =-0.5 V at 30 °C), large current variation of 310 μA (under the 1% H2 /air gas and VR=-5 V at 200 °C), widespread reverse-voltage regime (0 ∼ -5 V), stable hydrogen-sensing current-voltage (I-V) curves, and fast transient response time of 1.5 s. The calculated Schottky barrier-height change and series-resistance variation, from the thermionic-emission model and Norde method, are 87.0 meV and 288 Ω, respectively (under the 1% H2/air gas at 30 °C). The hydrogen concentrations and operating temperatures tested in this letter are in the range of 15 ppm-1% H2/air and 30 degC-250 °C, respectively. Based on the excellent integration compatibility with InP-based electronic devices, the studied device provides the potentiality in high-performance sensor-array applications.

頁(從 - 到)951-954
期刊IEEE Electron Device Letters
出版狀態Published - 2006 十二月 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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