A novel synthesis of a CuInSe ₂ thin film from electrodeposited Cu-Se-In-Se precursors with three steps annealing

In this study, copper indium diselenide (CIS) films were synthesized from electrodeposited Cu-Se-In-Se precursors by three step annealing. The Se layer between Cu and In layer was grown to prevent the formation of Cu/In compound. The Cu-Se precursors were first annealed to grow uniform and conductive Cu ₂Se surface. After deposition of the four layers precursors, two steps annealing was employed to form Cu ₂Se-In ₂Se ₃ precursors. Transforming Cu ₂Se-In ₂Se ₃ to CIS required less thermal energy. Therefore, high quality CIS film can be synthesized by two steps annealing due to its high crystallinity. The properties of the CIS films were characterized by scanning electron microscopy (SEM), X-ray Diffraction (XRD), and Raman Spectra.