A novel technique for studying electric field effect of carrier emission from a deep level center

G. P. Li, K. L. Wang

研究成果: Article同行評審

33 引文 斯高帕斯(Scopus)

摘要

A new reverse-bias pulsed deep level transient spectroscopy technique (RDLTS) is reported for studying the electric field effect of carrier emission from a deep level defect. The technique uses a reverse-bias pulse whose duration controls the emission of the carriers from a narrow region. The electric field in the region is determined by the pulse height used. The subsequent transient signal due to the capture of carriers by the defect states in the narrow region, in contrast with the emission signal in conventional DLTS, was obtained. The technique is extremely simple to use and requires no additional equipment when using a conventional DLTS setup. Formulation of this approach and the experimental results using this technique were given to illustrate the validity and simplicity of the technique.

原文English
頁(從 - 到)838-840
頁數3
期刊Applied Physics Letters
42
發行號9
DOIs
出版狀態Published - 1983

All Science Journal Classification (ASJC) codes

  • 物理與天文學(雜項)

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