A Novel Three-Dimensional 6T-SRAM Cell Featuring Vertical Transistors and 24F²Layout Area

Physics & Astronomy

• random access memory 100%
• transistors 68%
• cells 46%
• costs 21%
• rails 17%
• masks 12%
• fabrication 8%
• electric potential 7%
• simulation 5%

Engineering & Materials Science

• Transistors 73%
• Data storage equipment 52%
• Masks 20%
• Rails 18%
• Costs 16%
• Electric potential 11%