A novel vertical-cavity surface-emitting laser with semiconductor/superlattice distributed Bragg reflectors

Yan Kuin Su, Jingchang Zhong, Shoou Jinn Chang

研究成果: Article同行評審

6 引文 斯高帕斯(Scopus)

摘要

Taking into account the tunneling effect of the superlattice, the authors present for the first time a vertical-cavity surface-emitting laser with AlAs[GaAs-AlAs] semiconductor/superlattice distributed Bragg reflectors (DBRs). The structure of a 19-period-AlAs (73.3 nm)-18.5-pair [GaAs (3.0 nm)-AlAs (0.7 nm)] DBR was grown on an n-GaAs (100) substrate by molecular beam epitaxy, and the device was fabricated by using a modified technique of proton implantation. It was found from the experiments that the peak reflectivity of the DBR is as high as 99.7%, the central wavelength is at about 840 nm, and the reflection bandwidth is wide up to 90 nm. A 20 × 20 μm2 square mesa on the top of the DBR was made by the wet chemical etching method to measure the series resistance of the devices. It can be seen that more than a third of them are within 20-30 Ω that lead to ideal optical characteristics, low dissipated power, and reliability-some of the most important factors for the devices to be used in a number of applications in the future.

原文English
頁(從 - 到)1388-1390
頁數3
期刊IEEE Photonics Technology Letters
14
發行號10
DOIs
出版狀態Published - 2002 十月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 原子與分子物理與光學
  • 電氣與電子工程

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