A novel, very high breakdown voltage, field effect transistor prepared by molecular beam epitaxy

W. C. Liu, W. S. Lour, C. Y. Sun, H. R. Chen

研究成果: Article同行評審

4 引文 斯高帕斯(Scopus)

摘要

A novel, very high breakdown voltage, field effect transistor (FET) using a camel diode structure instead of a Schottky barrier gate has been fabricated successfully by molecular beam epitaxy. The camel diode gate has several advantages over a conventional metal-electron-semiconductor FET, including elimination of metallurgical difficulties of the metal-semiconductor contact, relatively easy adjustment of built-in voltage and the potential for improving reliability in adverse environments and under high power dissipation. If the gate length is reduced to 1 microm, a transconductance in excess of 200 mS mm-1 can be expected. A significant improvement of the gate-drain breakdown voltage to 70 V has been obtained. This excellent value is superior to those reported for other GaAs FETs. Consequently, the proposed structure is suitable for high power applications.

原文English
頁(從 - 到)1-6
頁數6
期刊Thin Solid Films
195
發行號1-2
DOIs
出版狀態Published - 1991 一月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 表面和介面
  • 表面、塗料和薄膜
  • 金屬和合金
  • 材料化學

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