TY - GEN
T1 - A path to 10% efficiency for tin sulfide devices
AU - Mangan, Niall M.
AU - Brandt, Riley E.
AU - Steinmann, Vera
AU - Jaramillo, R.
AU - Li, Jian V.
AU - Poindexter, Jeremy R.
AU - Hartman, Katy
AU - Sun, Leizhi
AU - Gordon, Roy G.
AU - Buonassisi, Tonio
PY - 2014/10/15
Y1 - 2014/10/15
N2 - We preform device simulations of a tin sulfide (SnS) device stack using SCAPS to define a path to 10% efficient devices. We determine and constrain a baseline device model using recent experimental results on one of our 3.9% efficient cells. Through a multistep fitting process, we find a conduction band cliff of -0.2 eV between SnS and Zn(O,S) to be limiting the open circuit voltage (VOC). To move towards a higher efficiency, we can optimize the buffer layer band alignment. Improvement of the SnS lifetime to >1 ns is necessary to reach 10% efficiency. Additionally, absorber-buffer interface recombination must be suppressed, either by reducing recombination activity of defects or creating a strong inversion layer at the interface.
AB - We preform device simulations of a tin sulfide (SnS) device stack using SCAPS to define a path to 10% efficient devices. We determine and constrain a baseline device model using recent experimental results on one of our 3.9% efficient cells. Through a multistep fitting process, we find a conduction band cliff of -0.2 eV between SnS and Zn(O,S) to be limiting the open circuit voltage (VOC). To move towards a higher efficiency, we can optimize the buffer layer band alignment. Improvement of the SnS lifetime to >1 ns is necessary to reach 10% efficiency. Additionally, absorber-buffer interface recombination must be suppressed, either by reducing recombination activity of defects or creating a strong inversion layer at the interface.
UR - http://www.scopus.com/inward/record.url?scp=84912097568&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84912097568&partnerID=8YFLogxK
U2 - 10.1109/PVSC.2014.6925404
DO - 10.1109/PVSC.2014.6925404
M3 - Conference contribution
AN - SCOPUS:84912097568
T3 - 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
SP - 2373
EP - 2378
BT - 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 40th IEEE Photovoltaic Specialist Conference, PVSC 2014
Y2 - 8 June 2014 through 13 June 2014
ER -