A photo-polymerization resist for UV nanoimprint lithography

Chun Chang Wu, Steve Lien Chung Hsu, Wen Chang Liao

研究成果: Article同行評審

12 引文 斯高帕斯(Scopus)

摘要

A novel liquid photo-polymerization resist was prepared for nanoimprint lithography on transparent flexible plastic substrates. The resist is a mixture of polymethylmethacrylate (PMMA), methylmethacrylate (MMA), methacylic acid (MAA) and two photo-initiators, (2-isopropyl thioxanthone (ITX) and ethyl 4-(dimethylamino)benzoate (EDAB)). The resist can be imprinted at room temperature with a pressure of 0.25 kg/cm2, and then exposed from the transparent substrate side using a broad band UV lamp to obtain nano- and micro-scale patterns. Replications of high-density line and space patterns with resolution of 150 nm were obtained on a flexible indium tin oxide/poly(ethylene terephthalate) (ITO/PET) substrate. The liquid resist has low viscosity due to the liquid monomers, and low shrinkage due to the addition of PMMA as a binder.

原文English
頁(從 - 到)325-329
頁數5
期刊Microelectronic Engineering
86
發行號3
DOIs
出版狀態Published - 2009 三月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 原子與分子物理與光學
  • 凝聚態物理學
  • 表面、塗料和薄膜
  • 電氣與電子工程

指紋

深入研究「A photo-polymerization resist for UV nanoimprint lithography」主題。共同形成了獨特的指紋。

引用此