A physics-based compact model for nano-scale DG and FD/SOI MOSFETs

Jerry G. Possum, Lixin Ge, Meng Hsueh Chiang

研究成果: Conference contribution

3 引文 斯高帕斯(Scopus)

摘要

A process/physics-based compact model (UFDG) for double-gate (DG) MOSFETs is overviewed. The model, in essence, is a compact Poisson-Schrödinger solver, including accountings for short-channel effects, and is applicable to nano-scale fully depleted (FD) SOI MOSFETs as well as generic DG devices in ultra-thin Si films. The utility of UFDG is demonstrated by using it in Spice3 to design and characterize thin Si-film MOSFETs and to project extremely scaled DG and FD/SOI CMOS performances.

原文English
主出版物標題2003 Nanotechnology Conference and Trade Show - Nanotech 2003
編輯M. Laudon, B. Romanowicz
頁面274-277
頁數4
出版狀態Published - 2003
事件2003 Nanotechnology Conference and Trade Show - Nanotech 2003 - San Francisco, CA, United States
持續時間: 2003 二月 232003 二月 27

出版系列

名字2003 Nanotechnology Conference and Trade Show - Nanotech 2003
2

Other

Other2003 Nanotechnology Conference and Trade Show - Nanotech 2003
國家/地區United States
城市San Francisco, CA
期間03-02-2303-02-27

All Science Journal Classification (ASJC) codes

  • 工程 (全部)

指紋

深入研究「A physics-based compact model for nano-scale DG and FD/SOI MOSFETs」主題。共同形成了獨特的指紋。

引用此