A physics-based compact model for nano-scale DG and FD/SOI MOSFETs

Jerry G. Possum, Lixin Ge, Meng Hsueh Chiang

研究成果: Conference contribution

3 引文 (Scopus)

摘要

A process/physics-based compact model (UFDG) for double-gate (DG) MOSFETs is overviewed. The model, in essence, is a compact Poisson-Schrödinger solver, including accountings for short-channel effects, and is applicable to nano-scale fully depleted (FD) SOI MOSFETs as well as generic DG devices in ultra-thin Si films. The utility of UFDG is demonstrated by using it in Spice3 to design and characterize thin Si-film MOSFETs and to project extremely scaled DG and FD/SOI CMOS performances.

原文English
主出版物標題2003 Nanotechnology Conference and Trade Show - Nanotech 2003
編輯M. Laudon, B. Romanowicz
頁面274-277
頁數4
出版狀態Published - 2003 十二月 1
事件2003 Nanotechnology Conference and Trade Show - Nanotech 2003 - San Francisco, CA, United States
持續時間: 2003 二月 232003 二月 27

出版系列

名字2003 Nanotechnology Conference and Trade Show - Nanotech 2003
2

Other

Other2003 Nanotechnology Conference and Trade Show - Nanotech 2003
國家United States
城市San Francisco, CA
期間03-02-2303-02-27

指紋

Physics

All Science Journal Classification (ASJC) codes

  • Engineering(all)

引用此文

Possum, J. G., Ge, L., & Chiang, M. H. (2003). A physics-based compact model for nano-scale DG and FD/SOI MOSFETs. 於 M. Laudon, & B. Romanowicz (編輯), 2003 Nanotechnology Conference and Trade Show - Nanotech 2003 (頁 274-277). (2003 Nanotechnology Conference and Trade Show - Nanotech 2003; 卷 2).
Possum, Jerry G. ; Ge, Lixin ; Chiang, Meng Hsueh. / A physics-based compact model for nano-scale DG and FD/SOI MOSFETs. 2003 Nanotechnology Conference and Trade Show - Nanotech 2003. 編輯 / M. Laudon ; B. Romanowicz. 2003. 頁 274-277 (2003 Nanotechnology Conference and Trade Show - Nanotech 2003).
@inproceedings{27a7bc77ff304018a57e387859cd0b56,
title = "A physics-based compact model for nano-scale DG and FD/SOI MOSFETs",
abstract = "A process/physics-based compact model (UFDG) for double-gate (DG) MOSFETs is overviewed. The model, in essence, is a compact Poisson-Schr{\"o}dinger solver, including accountings for short-channel effects, and is applicable to nano-scale fully depleted (FD) SOI MOSFETs as well as generic DG devices in ultra-thin Si films. The utility of UFDG is demonstrated by using it in Spice3 to design and characterize thin Si-film MOSFETs and to project extremely scaled DG and FD/SOI CMOS performances.",
author = "Possum, {Jerry G.} and Lixin Ge and Chiang, {Meng Hsueh}",
year = "2003",
month = "12",
day = "1",
language = "English",
isbn = "0972842209",
series = "2003 Nanotechnology Conference and Trade Show - Nanotech 2003",
pages = "274--277",
editor = "M. Laudon and B. Romanowicz",
booktitle = "2003 Nanotechnology Conference and Trade Show - Nanotech 2003",

}

Possum, JG, Ge, L & Chiang, MH 2003, A physics-based compact model for nano-scale DG and FD/SOI MOSFETs. 於 M Laudon & B Romanowicz (編輯), 2003 Nanotechnology Conference and Trade Show - Nanotech 2003. 2003 Nanotechnology Conference and Trade Show - Nanotech 2003, 卷 2, 頁 274-277, 2003 Nanotechnology Conference and Trade Show - Nanotech 2003, San Francisco, CA, United States, 03-02-23.

A physics-based compact model for nano-scale DG and FD/SOI MOSFETs. / Possum, Jerry G.; Ge, Lixin; Chiang, Meng Hsueh.

2003 Nanotechnology Conference and Trade Show - Nanotech 2003. 編輯 / M. Laudon; B. Romanowicz. 2003. p. 274-277 (2003 Nanotechnology Conference and Trade Show - Nanotech 2003; 卷 2).

研究成果: Conference contribution

TY - GEN

T1 - A physics-based compact model for nano-scale DG and FD/SOI MOSFETs

AU - Possum, Jerry G.

AU - Ge, Lixin

AU - Chiang, Meng Hsueh

PY - 2003/12/1

Y1 - 2003/12/1

N2 - A process/physics-based compact model (UFDG) for double-gate (DG) MOSFETs is overviewed. The model, in essence, is a compact Poisson-Schrödinger solver, including accountings for short-channel effects, and is applicable to nano-scale fully depleted (FD) SOI MOSFETs as well as generic DG devices in ultra-thin Si films. The utility of UFDG is demonstrated by using it in Spice3 to design and characterize thin Si-film MOSFETs and to project extremely scaled DG and FD/SOI CMOS performances.

AB - A process/physics-based compact model (UFDG) for double-gate (DG) MOSFETs is overviewed. The model, in essence, is a compact Poisson-Schrödinger solver, including accountings for short-channel effects, and is applicable to nano-scale fully depleted (FD) SOI MOSFETs as well as generic DG devices in ultra-thin Si films. The utility of UFDG is demonstrated by using it in Spice3 to design and characterize thin Si-film MOSFETs and to project extremely scaled DG and FD/SOI CMOS performances.

UR - http://www.scopus.com/inward/record.url?scp=6344252806&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=6344252806&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:6344252806

SN - 0972842209

T3 - 2003 Nanotechnology Conference and Trade Show - Nanotech 2003

SP - 274

EP - 277

BT - 2003 Nanotechnology Conference and Trade Show - Nanotech 2003

A2 - Laudon, M.

A2 - Romanowicz, B.

ER -

Possum JG, Ge L, Chiang MH. A physics-based compact model for nano-scale DG and FD/SOI MOSFETs. 於 Laudon M, Romanowicz B, 編輯, 2003 Nanotechnology Conference and Trade Show - Nanotech 2003. 2003. p. 274-277. (2003 Nanotechnology Conference and Trade Show - Nanotech 2003).