@inproceedings{e242b105c3904064aef07a54809a79d1,
title = "A predictive resistive RAM compact model with synaptic behavior for circuit simulations",
abstract = "As one of the promising candidates of next generation memory, resistive random access memory (RRAM) does not only show good storage capability but also potential of neuromorphic operation. In this paper we introduce a compact model that could predict the bipolar switching behavior of RRAM, and the conductance of low resistance state is programmable which could mimic the synapse behavior. Design insight based on the synaptic plasticity is provided as well.",
author = "Lee, {Jia Wei} and Hsu, {Chun Hsiang} and Chiang, {Meng Hsueh}",
year = "2018",
month = jan,
day = "1",
language = "English",
series = "TechConnect Briefs 2018 - Advanced Materials",
publisher = "TechConnect",
pages = "232--235",
editor = "Matthew Laudon and Fiona Case and Bart Romanowicz and Fiona Case",
booktitle = "TechConnect Briefs 2018 - Informatics, Electronics and Microsystems",
note = "11th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 20th Annual Nanotech Conference and Expo,the 2018 SBIR/STTR Spring Innovation Conference, and the Defense TechConnect DTC Spring Conference ; Conference date: 13-05-2018 Through 16-05-2018",
}