A predictive resistive RAM compact model with synaptic behavior for circuit simulations

Jia Wei Lee, Chun Hsiang Hsu, Meng Hsueh Chiang

研究成果: Conference contribution

摘要

As one of the promising candidates of next generation memory, resistive random access memory (RRAM) does not only show good storage capability but also potential of neuromorphic operation. In this paper we introduce a compact model that could predict the bipolar switching behavior of RRAM, and the conductance of low resistance state is programmable which could mimic the synapse behavior. Design insight based on the synaptic plasticity is provided as well.

原文English
主出版物標題TechConnect Briefs 2018 - Informatics, Electronics and Microsystems
編輯Matthew Laudon, Fiona Case, Bart Romanowicz, Fiona Case
發行者TechConnect
頁面232-235
頁數4
ISBN(電子)9780998878256
出版狀態Published - 2018 一月 1
事件11th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 20th Annual Nanotech Conference and Expo,the 2018 SBIR/STTR Spring Innovation Conference, and the Defense TechConnect DTC Spring Conference - Anaheim, United States
持續時間: 2018 五月 132018 五月 16

出版系列

名字TechConnect Briefs 2018 - Advanced Materials
4

Other

Other11th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 20th Annual Nanotech Conference and Expo,the 2018 SBIR/STTR Spring Innovation Conference, and the Defense TechConnect DTC Spring Conference
國家United States
城市Anaheim
期間18-05-1318-05-16

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

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