A proposal for epitaxial thin film growth in outer space

Alex Ignatiev, C. W. Chu

研究成果: Article同行評審

8 引文 斯高帕斯(Scopus)

摘要

A new concept for materials processing in space exploits the ultra-vacuum component of space for thin film epitaxial growth. The unique low earth orbit space environment is expected to yield 10-14 torr or better pressures, semi-infinite pumping speeds, and large ultra-vacuum volume (~100 m3) without walls. These space ultra-vacuum properties promise major improvement in the quality, unique nature, and the throughput of epitaxially grown materials. Advanced thin film materials to be epitaxially grown in space include semiconductors, magnetic materials, and thin film high temperature superconductors.

原文English
頁(從 - 到)2639-2643
頁數5
期刊Metallurgical Transactions A
19
發行號11
DOIs
出版狀態Published - 1988 十一月

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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