A Pt/AlGaN/GaN heterostructure field-effect transistor (HFET) prepared by an electrophoretic deposition (EPD)-gate approach

Ching Wen Hung, Ching Hong Chang, Wei Cheng Chen, Chun Chia Chen, Huey Ing Chen, Yu Ting Tsai, Jung Hui Tsai, Wen Chau Liu

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

Based on an electrophoretic deposition (EPD)-gate approach, a Pt/AlGaN/GaN heterostructure field-effect transistor (HFET) is fabricated and investigated at higher temperatures. The Pt/AlGaN interface with nearly oxide-free is verified by an Auger Electron Spectroscopy (AES) depth profile for the studied EPD-HFET. This result substantially enhances device performance at room temperature (300 K). Experimentally, the studied EPD-HFET exhibits a high turn-on voltage, a well suppression on gate leakage, a superior maximum drain saturation current, and an excellent extrinsic transconductance. Moreover, the microwave performance of an EPD-HFET is demonstrated at room temperature. Consequentially, this EPD-gate approach gives a promise for high-performance electronic applications.

原文English
頁(從 - 到)5-9
頁數5
期刊Solid-State Electronics
124
DOIs
出版狀態Published - 2016 10月 1

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 電氣與電子工程
  • 材料化學

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