A Pt/AlGaN/GaN heterostructure field-effect transistor (HFET) prepared by an electrophoretic deposition (EPD)-gate approach

Ching Wen Hung, Ching Hong Chang, Wei Cheng Chen, Chun Chia Chen, Huey Ing Chen, Yu Ting Tsai, Jung Hui Tsai, Wen Chau Liu

研究成果: Article

1 引文 (Scopus)

摘要

Based on an electrophoretic deposition (EPD)-gate approach, a Pt/AlGaN/GaN heterostructure field-effect transistor (HFET) is fabricated and investigated at higher temperatures. The Pt/AlGaN interface with nearly oxide-free is verified by an Auger Electron Spectroscopy (AES) depth profile for the studied EPD-HFET. This result substantially enhances device performance at room temperature (300 K). Experimentally, the studied EPD-HFET exhibits a high turn-on voltage, a well suppression on gate leakage, a superior maximum drain saturation current, and an excellent extrinsic transconductance. Moreover, the microwave performance of an EPD-HFET is demonstrated at room temperature. Consequentially, this EPD-gate approach gives a promise for high-performance electronic applications.

原文English
頁(從 - 到)5-9
頁數5
期刊Solid-State Electronics
124
DOIs
出版狀態Published - 2016 十月 1

指紋

High electron mobility transistors
field effect transistors
Transconductance
room temperature
transconductance
Auger electron spectroscopy
Temperature
Oxides
Auger spectroscopy
electron spectroscopy
leakage
Microwaves
aluminum gallium nitride
retarding
saturation
microwaves
oxides
Electric potential
electric potential
profiles

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

引用此文

Hung, Ching Wen ; Chang, Ching Hong ; Chen, Wei Cheng ; Chen, Chun Chia ; Chen, Huey Ing ; Tsai, Yu Ting ; Tsai, Jung Hui ; Liu, Wen Chau. / A Pt/AlGaN/GaN heterostructure field-effect transistor (HFET) prepared by an electrophoretic deposition (EPD)-gate approach. 於: Solid-State Electronics. 2016 ; 卷 124. 頁 5-9.
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abstract = "Based on an electrophoretic deposition (EPD)-gate approach, a Pt/AlGaN/GaN heterostructure field-effect transistor (HFET) is fabricated and investigated at higher temperatures. The Pt/AlGaN interface with nearly oxide-free is verified by an Auger Electron Spectroscopy (AES) depth profile for the studied EPD-HFET. This result substantially enhances device performance at room temperature (300 K). Experimentally, the studied EPD-HFET exhibits a high turn-on voltage, a well suppression on gate leakage, a superior maximum drain saturation current, and an excellent extrinsic transconductance. Moreover, the microwave performance of an EPD-HFET is demonstrated at room temperature. Consequentially, this EPD-gate approach gives a promise for high-performance electronic applications.",
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A Pt/AlGaN/GaN heterostructure field-effect transistor (HFET) prepared by an electrophoretic deposition (EPD)-gate approach. / Hung, Ching Wen; Chang, Ching Hong; Chen, Wei Cheng; Chen, Chun Chia; Chen, Huey Ing; Tsai, Yu Ting; Tsai, Jung Hui; Liu, Wen Chau.

於: Solid-State Electronics, 卷 124, 01.10.2016, p. 5-9.

研究成果: Article

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T1 - A Pt/AlGaN/GaN heterostructure field-effect transistor (HFET) prepared by an electrophoretic deposition (EPD)-gate approach

AU - Hung, Ching Wen

AU - Chang, Ching Hong

AU - Chen, Wei Cheng

AU - Chen, Chun Chia

AU - Chen, Huey Ing

AU - Tsai, Yu Ting

AU - Tsai, Jung Hui

AU - Liu, Wen Chau

PY - 2016/10/1

Y1 - 2016/10/1

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AB - Based on an electrophoretic deposition (EPD)-gate approach, a Pt/AlGaN/GaN heterostructure field-effect transistor (HFET) is fabricated and investigated at higher temperatures. The Pt/AlGaN interface with nearly oxide-free is verified by an Auger Electron Spectroscopy (AES) depth profile for the studied EPD-HFET. This result substantially enhances device performance at room temperature (300 K). Experimentally, the studied EPD-HFET exhibits a high turn-on voltage, a well suppression on gate leakage, a superior maximum drain saturation current, and an excellent extrinsic transconductance. Moreover, the microwave performance of an EPD-HFET is demonstrated at room temperature. Consequentially, this EPD-gate approach gives a promise for high-performance electronic applications.

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