A Pt/AlGaN/GaN heterostructure field-effect transistor (HFET) prepared by an electrophoretic deposition (EPD)-gate approach

Ching Wen Hung, Ching Hong Chang, Wei Cheng Chen, Chun Chia Chen, Huey Ing Chen, Yu Ting Tsai, Jung Hui Tsai, Wen Chau Liu

研究成果: Article › 同行評審

1 引文 斯高帕斯（Scopus）

指紋 深入研究「A Pt/AlGaN/GaN heterostructure field-effect transistor (HFET) prepared by an electrophoretic deposition (EPD)-gate approach」主題。共同形成了獨特的指紋。

Chemical Compounds

Physics & Astronomy

Engineering & Materials Science