A quantum trap MONOS memory device using AlN

C. H. Lai, C. H. Wu, Albert Chin, S. J. Wang, S. P. McAlister

研究成果: Article同行評審

3 引文 斯高帕斯(Scopus)

摘要

We report a IrO2 -HfAlO-AlN- SiO2 -Si MONOS device that displays excellent characteristics in terms of speed (100 μs at ±13 V for program/erase) and memory window (3.7 V) at 85°C operation. This device also shows good 10-year extrapolated data retention with a large 1.9 V window at 85°C. The achieved performance compares well with the best reported memory device data.

原文English
文章編號049608JES
頁(從 - 到)G738-G741
期刊Journal of the Electrochemical Society
153
發行號8
DOIs
出版狀態Published - 2006 八月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 可再生能源、永續發展與環境
  • 表面、塗料和薄膜
  • 電化學
  • 材料化學

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