A quantum trap MONOS memory device using AlN

C. H. Lai; C. H. Wu; Albert Chin; S. J. Wang; S. P. McAlister

doi:10.1149/1.2208742

A quantum trap MONOS memory device using AlN

C. H. Lai, C. H. Wu, Albert Chin, S. J. Wang, S. P. McAlister

微電子工程研究所

研究成果: Article › 同行評審

3 引文斯高帕斯（Scopus）

摘要

We report a IrO2 -HfAlO-AlN- SiO2 -Si MONOS device that displays excellent characteristics in terms of speed (100 μs at ±13 V for program/erase) and memory window (3.7 V) at 85°C operation. This device also shows good 10-year extrapolated data retention with a large 1.9 V window at 85°C. The achieved performance compares well with the best reported memory device data.

原文	English
文章編號	049608JES
頁（從 - 到）	G738-G741
期刊	Journal of the Electrochemical Society
卷	153
發行號	8
DOIs	https://doi.org/10.1149/1.2208742
出版狀態	Published - 2006 8月

All Science Journal Classification (ASJC) codes

電子、光磁材料
可再生能源、永續發展與環境
表面、塗料和薄膜
電化學
材料化學

UN SDG

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10.1149/1.2208742

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AU - Lai, C. H.

AU - Wu, C. H.

AU - Chin, Albert

AU - Wang, S. J.

AU - McAlister, S. P.

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Y1 - 2006/8

N2 - We report a IrO2 -HfAlO-AlN- SiO2 -Si MONOS device that displays excellent characteristics in terms of speed (100 μs at ±13 V for program/erase) and memory window (3.7 V) at 85°C operation. This device also shows good 10-year extrapolated data retention with a large 1.9 V window at 85°C. The achieved performance compares well with the best reported memory device data.

AB - We report a IrO2 -HfAlO-AlN- SiO2 -Si MONOS device that displays excellent characteristics in terms of speed (100 μs at ±13 V for program/erase) and memory window (3.7 V) at 85°C operation. This device also shows good 10-year extrapolated data retention with a large 1.9 V window at 85°C. The achieved performance compares well with the best reported memory device data.

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A quantum trap MONOS memory device using AlN

摘要

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UN SDG

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