A review of metrology for nanoelectronics

Kosmas Galatsis, Ron Potok, Kang L. Wang

研究成果: Review article同行評審

3 引文 斯高帕斯(Scopus)

摘要

This paper highlights some new and old techniques that will have important metrology inroads for nanoelectronics beyond CMOS. Traditional electron microscopy techniques are envisioned to remain and play a core role at the nanoscale level, and others such as probing techniques and special holographic imaging will further be enhanced and provide more diverse capabilities. The paper presents metrology techniques for beyond CMOS as presented at the First Metrology for Beyond CMOS workshop hosted by the Focus Center Research Program Center of Functional Engineered Nano Architectonics, the National Science Foundation Nanoscale Science and Engineering Center for Nanoprobing, and the California Institute of Technology (CNSI).

原文English
文章編號4369336
頁(從 - 到)542-548
頁數7
期刊IEEE Transactions on Semiconductor Manufacturing
20
發行號4
DOIs
出版狀態Published - 2007 11月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 工業與製造工程
  • 電氣與電子工程

指紋

深入研究「A review of metrology for nanoelectronics」主題。共同形成了獨特的指紋。

引用此