A Si nanowire photovoltaic device prepared by selective electroless etching

T. Y. Tsai, Shoou-Jinn Chang, T. J. Hsueh, C. L. Hsu, W. Y. Weng, J. M. Shieh

研究成果: Article

摘要

This study reports the preparation of Si nanowires (SiNWs) by selective electroless etching and fabrication of photovoltaic (PV) cells. It was found that the SiNWs with 3μm average length and 100nm average diameter were formed only in the areas not covered by the Cr electrodes. It was also found that average reflectance in the 400-1000nm wavelength range reduced from 35 to around 2 with the SiNWs. Furthermore, it was found that we could enhance the short-circuit current density of the PV cells from 11.5 to 21.8mA/cm2 and enhance conversion efficiency of the PV cells from 4.62 to 8.15 using the selective electroless etching.

原文English
文章編號6294450
頁(從 - 到)1148-1150
頁數3
期刊IEEE Transactions on Nanotechnology
11
發行號6
DOIs
出版狀態Published - 2012 十二月 4

指紋

Photovoltaic cells
Nanowires
Etching
Short circuit currents
Conversion efficiency
Current density
Fabrication
Wavelength
Electrodes

All Science Journal Classification (ASJC) codes

  • Computer Science Applications
  • Electrical and Electronic Engineering

引用此文

Tsai, T. Y. ; Chang, Shoou-Jinn ; Hsueh, T. J. ; Hsu, C. L. ; Weng, W. Y. ; Shieh, J. M. / A Si nanowire photovoltaic device prepared by selective electroless etching. 於: IEEE Transactions on Nanotechnology. 2012 ; 卷 11, 編號 6. 頁 1148-1150.
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abstract = "This study reports the preparation of Si nanowires (SiNWs) by selective electroless etching and fabrication of photovoltaic (PV) cells. It was found that the SiNWs with 3μm average length and 100nm average diameter were formed only in the areas not covered by the Cr electrodes. It was also found that average reflectance in the 400-1000nm wavelength range reduced from 35 to around 2 with the SiNWs. Furthermore, it was found that we could enhance the short-circuit current density of the PV cells from 11.5 to 21.8mA/cm2 and enhance conversion efficiency of the PV cells from 4.62 to 8.15 using the selective electroless etching.",
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A Si nanowire photovoltaic device prepared by selective electroless etching. / Tsai, T. Y.; Chang, Shoou-Jinn; Hsueh, T. J.; Hsu, C. L.; Weng, W. Y.; Shieh, J. M.

於: IEEE Transactions on Nanotechnology, 卷 11, 編號 6, 6294450, 04.12.2012, p. 1148-1150.

研究成果: Article

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AB - This study reports the preparation of Si nanowires (SiNWs) by selective electroless etching and fabrication of photovoltaic (PV) cells. It was found that the SiNWs with 3μm average length and 100nm average diameter were formed only in the areas not covered by the Cr electrodes. It was also found that average reflectance in the 400-1000nm wavelength range reduced from 35 to around 2 with the SiNWs. Furthermore, it was found that we could enhance the short-circuit current density of the PV cells from 11.5 to 21.8mA/cm2 and enhance conversion efficiency of the PV cells from 4.62 to 8.15 using the selective electroless etching.

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