A simple approach to reduce interlayer formation of sputtered HF-based gate dielectrics by nitrogen incorporation

C. H. Lu, Yi Sheng Lai, J. S. Chen

研究成果: Conference contribution

3 引文 斯高帕斯(Scopus)

摘要

In this work, we have demonstrated a simple approach to suppress interfacial layer (IL) formation for HfOx and HfOxN y gate dielectrics by sputtering HfOx and HfNx films, respectively, followed by further annealing. The material characteristics of dielectric films were investigated by glancing incident angle X-ray diffraction (GIAXRD), high-resolution transmission electron microscopy (HR-TEM), X-ray photoelectron spectroscopy (XPS), and spectroscopic ellipsometry. Both HfO x and HfOxNy films show amorphous structures after annealing up to 700C; nevertheless, the HfOxNy film presents the superiority to prevent interfacial layer (IL) formation over the HfOx film. Formation of a self-doped nitrogen-contained IL in the HfOxNy dielectric stack is detected by XPS analysis. Furthermore, the HfOxNy dielectric layer presents higher refractive index (about 2.0) than that of HfOx (about 1.8) in the range of visible light, indicative of its denser structure. It is suggested that a high nitrogen-doped HfOxNy dielectric stack can be achieved by this method, showing better properties than the HfOx one. copyright The Electrochemical Society.

原文English
主出版物標題Physics and Technology of High-k Gate Dielectrics III
發行者Electrochemical Society Inc.
頁面425-430
頁數6
版本5
ISBN(電子)1566774446
DOIs
出版狀態Published - 2006
事件3rd International Symposium on High Dielectric Constant Gate Stacks - 208th Meeting of the Electrochemical Society - Los Angeles, CA, United States
持續時間: 2005 十月 162005 十月 21

出版系列

名字ECS Transactions
號碼5
1
ISSN(列印)1938-5862
ISSN(電子)1938-6737

Other

Other3rd International Symposium on High Dielectric Constant Gate Stacks - 208th Meeting of the Electrochemical Society
國家/地區United States
城市Los Angeles, CA
期間05-10-1605-10-21

All Science Journal Classification (ASJC) codes

  • 工程 (全部)

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