A simple passivation technique for AlGaN/GaN ultraviolet schottky barrier photodetector

Han Yin Liu, Wei-Chou Hsu, Bo Yi Chou, Yi Hsuan Wang

研究成果: Article

15 引文 (Scopus)

摘要

This letter demonstrates and investigates AlGaN/GaN ultraviolet photodetector (UV-PD) with a simple passivation process. The hydrogen peroxide (H2O2) oxidation technique is adopted to complete the passivation. The results of chemical analysis suggest that the Al and Ga dangling bonds react with the oxygen atoms. This passivation process effectively reduces the side-wall surface states, which also suppress the dark current to 11 pA. In addition, the photo response and the UV to visible rejection ratio of the PD with H2O2 passivation process are enhanced to 8.1×10-3 A/W and 2.3 × 103 when the PD is biased at - 10 V. The noise equivalent power and the detectivity are determined to be 1.63 × 10-8 W and 1.33 × 108 cmHz 0.5 W-1. The simple passivation technique improves the AlGaN/GaN UV PD performances effectively.

原文English
文章編號6663601
頁(從 - 到)138-141
頁數4
期刊IEEE Photonics Technology Letters
26
發行號2
DOIs
出版狀態Published - 2014 一月 15

指紋

Photodetectors
Passivation
passivity
photometers
Dangling bonds
Dark currents
Surface states
dark current
chemical analysis
hydrogen peroxide
Hydrogen peroxide
rejection
Hydrogen Peroxide
oxygen atoms
aluminum gallium nitride
Oxygen
Atoms
Oxidation
oxidation
Chemical analysis

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics
  • Electronic, Optical and Magnetic Materials

引用此文

Liu, Han Yin ; Hsu, Wei-Chou ; Chou, Bo Yi ; Wang, Yi Hsuan. / A simple passivation technique for AlGaN/GaN ultraviolet schottky barrier photodetector. 於: IEEE Photonics Technology Letters. 2014 ; 卷 26, 編號 2. 頁 138-141.
@article{29e77d7369c24734802c5c8ebe198d13,
title = "A simple passivation technique for AlGaN/GaN ultraviolet schottky barrier photodetector",
abstract = "This letter demonstrates and investigates AlGaN/GaN ultraviolet photodetector (UV-PD) with a simple passivation process. The hydrogen peroxide (H2O2) oxidation technique is adopted to complete the passivation. The results of chemical analysis suggest that the Al and Ga dangling bonds react with the oxygen atoms. This passivation process effectively reduces the side-wall surface states, which also suppress the dark current to 11 pA. In addition, the photo response and the UV to visible rejection ratio of the PD with H2O2 passivation process are enhanced to 8.1×10-3 A/W and 2.3 × 103 when the PD is biased at - 10 V. The noise equivalent power and the detectivity are determined to be 1.63 × 10-8 W and 1.33 × 108 cmHz 0.5 W-1. The simple passivation technique improves the AlGaN/GaN UV PD performances effectively.",
author = "Liu, {Han Yin} and Wei-Chou Hsu and Chou, {Bo Yi} and Wang, {Yi Hsuan}",
year = "2014",
month = "1",
day = "15",
doi = "10.1109/LPT.2013.2290130",
language = "English",
volume = "26",
pages = "138--141",
journal = "IEEE Photonics Technology Letters",
issn = "1041-1135",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "2",

}

A simple passivation technique for AlGaN/GaN ultraviolet schottky barrier photodetector. / Liu, Han Yin; Hsu, Wei-Chou; Chou, Bo Yi; Wang, Yi Hsuan.

於: IEEE Photonics Technology Letters, 卷 26, 編號 2, 6663601, 15.01.2014, p. 138-141.

研究成果: Article

TY - JOUR

T1 - A simple passivation technique for AlGaN/GaN ultraviolet schottky barrier photodetector

AU - Liu, Han Yin

AU - Hsu, Wei-Chou

AU - Chou, Bo Yi

AU - Wang, Yi Hsuan

PY - 2014/1/15

Y1 - 2014/1/15

N2 - This letter demonstrates and investigates AlGaN/GaN ultraviolet photodetector (UV-PD) with a simple passivation process. The hydrogen peroxide (H2O2) oxidation technique is adopted to complete the passivation. The results of chemical analysis suggest that the Al and Ga dangling bonds react with the oxygen atoms. This passivation process effectively reduces the side-wall surface states, which also suppress the dark current to 11 pA. In addition, the photo response and the UV to visible rejection ratio of the PD with H2O2 passivation process are enhanced to 8.1×10-3 A/W and 2.3 × 103 when the PD is biased at - 10 V. The noise equivalent power and the detectivity are determined to be 1.63 × 10-8 W and 1.33 × 108 cmHz 0.5 W-1. The simple passivation technique improves the AlGaN/GaN UV PD performances effectively.

AB - This letter demonstrates and investigates AlGaN/GaN ultraviolet photodetector (UV-PD) with a simple passivation process. The hydrogen peroxide (H2O2) oxidation technique is adopted to complete the passivation. The results of chemical analysis suggest that the Al and Ga dangling bonds react with the oxygen atoms. This passivation process effectively reduces the side-wall surface states, which also suppress the dark current to 11 pA. In addition, the photo response and the UV to visible rejection ratio of the PD with H2O2 passivation process are enhanced to 8.1×10-3 A/W and 2.3 × 103 when the PD is biased at - 10 V. The noise equivalent power and the detectivity are determined to be 1.63 × 10-8 W and 1.33 × 108 cmHz 0.5 W-1. The simple passivation technique improves the AlGaN/GaN UV PD performances effectively.

UR - http://www.scopus.com/inward/record.url?scp=84892595497&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84892595497&partnerID=8YFLogxK

U2 - 10.1109/LPT.2013.2290130

DO - 10.1109/LPT.2013.2290130

M3 - Article

AN - SCOPUS:84892595497

VL - 26

SP - 138

EP - 141

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

SN - 1041-1135

IS - 2

M1 - 6663601

ER -