A mesa-etched layer at the source port, which serves as a resistor for self-biasing, is incorporated to simplify the fabrication processes and to provide a single bias in a PHEMT MMIC. The mesa-etched layer is also implemented in a two-stage 2.4GHz-2.5GHz, 3.3V, 23.5dBm self-biased AlGaAs/InGaAs/GaAs PHEMT MMIC as high gain and high linearity power amplifiers for wireless local-area network applications.
|頁（從 - 到）||2809-2812|
|期刊||Journal of Optoelectronics and Advanced Materials|
|出版狀態||Published - 2007 九月 1|
All Science Journal Classification (ASJC) codes