A single 3.3 v 2.4-2.5 GHz high linearity PHEMT MMIC power amplifier using an Mesa-etched layer as the self-biased resistor

Chen Kuo Chu, Hou Kuei Huang, Hong Zhi Liu, Jui Chieh Chiu, Che Hung Lin, Chuan Chien Hsu, Chang Luen Wu, Chian Sern Chang, Yeong Her Wang

研究成果: Article同行評審

摘要

A mesa-etched layer at the source port, which serves as a resistor for self-biasing, is incorporated to simplify the fabrication processes and to provide a single bias in a PHEMT MMIC. The mesa-etched layer is also implemented in a two-stage 2.4GHz-2.5GHz, 3.3V, 23.5dBm self-biased AlGaAs/InGaAs/GaAs PHEMT MMIC as high gain and high linearity power amplifiers for wireless local-area network applications.

原文English
頁(從 - 到)2809-2812
頁數4
期刊Journal of Optoelectronics and Advanced Materials
9
發行號9
出版狀態Published - 2007 九月 1

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 原子與分子物理與光學
  • 凝聚態物理學
  • 電氣與電子工程

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