A single-supply Ku-band 1-W power amplifier MMIC with compact self-bias PHEMTs

Hong Zhi Liu; Che Hung Lin; Chen Kuo Chu; Hou Kuei Huang; Mau Phon Houng; Ching Hsueh Chang; Chang Luen Wu; Chian Sern Chang; Yeong Her Wang

doi:10.1109/LMWC.2006.875627

A single-supply Ku-band 1-W power amplifier MMIC with compact self-bias PHEMTs

Hong Zhi Liu, Che Hung Lin, Chen Kuo Chu, Hou Kuei Huang, Mau Phon Houng, Ching Hsueh Chang, Chang Luen Wu, Chian Sern Chang, Yeong Her Wang

研究成果: Article › 同行評審

8 引文斯高帕斯（Scopus）

摘要

In this letter, the design of a self-bias 1.8-mm AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor with a compact source capacitor for operation in Ku-band frequency is described. Based on the proposed device, a self-bias Ku-band 1-W two-stage power amplifier monolithic microwave integrated circuit (MMIC) is also demonstrated. Under a single bias condition of 8 V and 630 mA, the self-bias MMIC possesses 14.2-dB small-signal gain, 30.2-dBm output power at 1-dB gain compression point with 19.2% power added efficiency and 31.3-dBm saturated output power with 22.5% power added efficiency at 14 GHz. With the performance comparable to the dual-bias MMIC counterpart, the proposed self-bias MMIC is more attractive to system designers on very small aperture terminal applications.

原文	English
文章編號	1637485
頁（從 - 到）	330-332
頁數	3
期刊	IEEE Microwave and Wireless Components Letters
卷	16
發行號	6
DOIs	https://doi.org/10.1109/LMWC.2006.875627
出版狀態	Published - 2006 六月

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/LMWC.2006.875627

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title = "A single-supply Ku-band 1-W power amplifier MMIC with compact self-bias PHEMTs",

abstract = "In this letter, the design of a self-bias 1.8-mm AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor with a compact source capacitor for operation in Ku-band frequency is described. Based on the proposed device, a self-bias Ku-band 1-W two-stage power amplifier monolithic microwave integrated circuit (MMIC) is also demonstrated. Under a single bias condition of 8 V and 630 mA, the self-bias MMIC possesses 14.2-dB small-signal gain, 30.2-dBm output power at 1-dB gain compression point with 19.2% power added efficiency and 31.3-dBm saturated output power with 22.5% power added efficiency at 14 GHz. With the performance comparable to the dual-bias MMIC counterpart, the proposed self-bias MMIC is more attractive to system designers on very small aperture terminal applications.",

author = "Liu, {Hong Zhi} and Lin, {Che Hung} and Chu, {Chen Kuo} and Huang, {Hou Kuei} and Houng, {Mau Phon} and Chang, {Ching Hsueh} and Wu, {Chang Luen} and Chang, {Chian Sern} and Wang, {Yeong Her}",

note = "Funding Information: Manuscript received October 3, 2005; revised March 22, 2006. This work was supported in part by the National Science Council of Taiwan, R.O.C. under Contracts NSC92-2215-E-006-019, and NSC93-2215-E-006-008, by the MOE Program for Promoting Academic Excellent of Universities under Grant A-91E-FA08-1-4, and the Foundation of Chen, Jieh-Chen Scholarship, Tainan, Taiwan.",

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language = "English",

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A single-supply Ku-band 1-W power amplifier MMIC with compact self-bias PHEMTs. / Liu, Hong Zhi; Lin, Che Hung; Chu, Chen Kuo; Huang, Hou Kuei; Houng, Mau Phon; Chang, Ching Hsueh; Wu, Chang Luen; Chang, Chian Sern; Wang, Yeong Her.

於: IEEE Microwave and Wireless Components Letters, 卷 16, 編號 6, 1637485, 06.2006, p. 330-332.

研究成果: Article › 同行評審

TY - JOUR

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AU - Liu, Hong Zhi

AU - Lin, Che Hung

AU - Chu, Chen Kuo

AU - Huang, Hou Kuei

AU - Houng, Mau Phon

AU - Chang, Ching Hsueh

AU - Wu, Chang Luen

AU - Chang, Chian Sern

AU - Wang, Yeong Her

N1 - Funding Information: Manuscript received October 3, 2005; revised March 22, 2006. This work was supported in part by the National Science Council of Taiwan, R.O.C. under Contracts NSC92-2215-E-006-019, and NSC93-2215-E-006-008, by the MOE Program for Promoting Academic Excellent of Universities under Grant A-91E-FA08-1-4, and the Foundation of Chen, Jieh-Chen Scholarship, Tainan, Taiwan.

PY - 2006/6

Y1 - 2006/6

N2 - In this letter, the design of a self-bias 1.8-mm AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor with a compact source capacitor for operation in Ku-band frequency is described. Based on the proposed device, a self-bias Ku-band 1-W two-stage power amplifier monolithic microwave integrated circuit (MMIC) is also demonstrated. Under a single bias condition of 8 V and 630 mA, the self-bias MMIC possesses 14.2-dB small-signal gain, 30.2-dBm output power at 1-dB gain compression point with 19.2% power added efficiency and 31.3-dBm saturated output power with 22.5% power added efficiency at 14 GHz. With the performance comparable to the dual-bias MMIC counterpart, the proposed self-bias MMIC is more attractive to system designers on very small aperture terminal applications.

AB - In this letter, the design of a self-bias 1.8-mm AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor with a compact source capacitor for operation in Ku-band frequency is described. Based on the proposed device, a self-bias Ku-band 1-W two-stage power amplifier monolithic microwave integrated circuit (MMIC) is also demonstrated. Under a single bias condition of 8 V and 630 mA, the self-bias MMIC possesses 14.2-dB small-signal gain, 30.2-dBm output power at 1-dB gain compression point with 19.2% power added efficiency and 31.3-dBm saturated output power with 22.5% power added efficiency at 14 GHz. With the performance comparable to the dual-bias MMIC counterpart, the proposed self-bias MMIC is more attractive to system designers on very small aperture terminal applications.

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