The authors report the growth of β-Ga2O33 nanowires by heating the GaNsapphire template and the fabrication of a β-Ga2O33 nanowire photodetector by depositing interdigitated contact electrodes. It was found that the average length and diameter of the β-Ga2O33 nanowires were around 10 μm and 100 nm, respectively. It was also found that the fabricated photodetector was solar-blind with sharp cutoff at 255 nm. With an incident light wavelength of 255 nm and an applied bias of 10 V, it was found that measured responsivity of the photodetector was 8.0×10-4 A/W.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering