A stacked memory device on logic 3D technology for ultra-high-density data storage

Jiyoung Kim, Augustin J. Hong, Sung Min Kim, Kyeong Sik Shin, Emil B. Song, Yongha Hwang, Faxian Xiu, Kosmas Galatsis, Chi On Chui, Rob N. Candler, Siyoung Choi, Joo Tae Moon, Kang L. Wang

研究成果: Article同行評審

37 引文 斯高帕斯(Scopus)

摘要

We have demonstrated, for the first time, a novel three-dimensional (3D) memory chip architecture of stacked-memory-devices-on-logic (SMOL) achieving up to 95% of cell-area efficiency by directly building up memory devices on top of front-end CMOS devices. In order to realize the SMOL, a unique 3D Flash memory device and vertical integration structure have been successfully developed. The SMOL architecture has great potential to achieve tera-bit level memory density by stacking memory devices vertically and maximizing cell-area efficiency. Furthermore, various emerging devices could replace the 3D memory device to develop new 3D chip architectures.

原文English
文章編號254006
期刊Nanotechnology
22
發行號25
DOIs
出版狀態Published - 2011 六月 24

All Science Journal Classification (ASJC) codes

  • 生物工程
  • 化學 (全部)
  • 材料科學(全部)
  • 材料力學
  • 機械工業
  • 電氣與電子工程

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