@inproceedings{c15e76122b3c49979cf7de440a119d3b,
title = "A steep subthreshold swing technique for gate-all-around SOI MOSFETs",
abstract = "A device design technique for silicon nanowire MOSFETs for low power capability beyond 10 nm technology node is demonstrated using 3D numerical simulation and physical analysis. The subthreshold kink effect enables the use of low supply bias without compromising performance. The kink-assisted methodology overcomes the fundamental and thermal voltage-limited subthreshold swing (SS).",
author = "Chen, \{C. Y.\} and Lin, \{J. T.\} and Chiang, \{M. H.\} and Hsu, \{W. C.\}",
note = "Publisher Copyright: {\textcopyright} The Electrochemical Society.; Symposium on Advanced CMOS-Compatible Semiconductor Devices 17 - 227th ECS Meeting ; Conference date: 24-05-2015 Through 28-05-2015",
year = "2015",
doi = "10.1149/06605.0087ecst",
language = "English",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "5",
pages = "87--92",
editor = "Y. Omura and Martino, \{J. A.\} and Raskin, \{J. P.\} and S. Selberherr and H. Ishii and F. Gamiz and Nguyen, \{B. Y.\}",
booktitle = "Advanced CMOS-Compatible Semiconductor Devices 17",
edition = "5",
}