A study of composite-passivation of an InGaPGaAs heterojunction bipolar transistor

Ssu I. Fu, Shiou Ying Cheng, Po Hsien Lai, Yan Ying Tsai, Ching Wen Hung, Chih Hung Yen, Wen Chau Liu

研究成果: Article同行評審

8 引文 斯高帕斯(Scopus)

摘要

The temperature-dependent direct current (dc) characteristics and radio frequency performance of an InGaPGaAs heterojunction bipolar transistor with the composite passivations on base surface are studied and demonstrated. For comparison, the characteristics of other samples with different treatments on the base surfaces are also included in this work. The device with composite passivations, i.e., the ledge structure and sulfur treatment, shows the best performance and related thermal stabilities on dc current gain ΒF, base surface recombination current density JSR, and base current ideality factor nB. Experimentally, the device with composite passivations can be operated in the extremely low collector current (IC ≤ 10-9 A) regime with a useful current gain (ΒF >10). Moreover, this device exhibits improved microwave characteristics and hence is promising for low-power electronic and communication applications.

原文English
文章編號046611JES
頁(從 - 到)G938-G942
期刊Journal of the Electrochemical Society
153
發行號11
DOIs
出版狀態Published - 2006

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 可再生能源、永續發展與環境
  • 表面、塗料和薄膜
  • 電化學
  • 材料化學

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