A study of the dark currents of InSb charge injection devices

T. P. Sun, R. H. Liao, C. H. Wang, H. M. Hong, H. Chang, C. W. Wu, J. S. Liu, H. H. Lin

研究成果: Article同行評審

摘要

The dark currents of InSb metal-insulator-semiconductor (MIS) charge injection devices (CIDs) in the temperature range 30 to 120 K are studied. It is found that a thermal-generating process dominates the dark current in the high temperature region. When the device is under small bias voltage, a bump in the trap emission current appears below 70 K. This current is due to carrier capture and emission processes of a hole trap state located in the bulk material, and the measured activation energy is 50 meV. For larger bias conditions, the band-to-band tunnelling current gradually overcomes the trap emission current. It smears out the bump in the trap emission current, and shows a slightly temperature-dependent behaviour in the plot. The effects of field electrodes are also studied. It is found from experimental results that the edge of the electric field around the device periphery plays an important role in the band-to-band tunnelling process, and a field electrode with suitable bias can improve the dark current response drastically.

原文English
頁(從 - 到)1287-1294
頁數8
期刊Optical and Quantum Electronics
28
發行號10
DOIs
出版狀態Published - 1996 一月 1

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 原子與分子物理與光學
  • 電氣與電子工程

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