TY - JOUR
T1 - A study on annealing mechanisms with different manganese contents in CuMn alloy
AU - Wu, Chia Yang
AU - Wu, Chi Ting
AU - Lee, Wen Hsi
AU - Chang, Shih Chieh
AU - Wang, Ying Lang
N1 - Funding Information:
This work was supported by the National Science Council of Taiwan (Grant No. NSC 100-2221-E-006-146 ). The authors thank National Cheng Kung University, Tainan, Taiwan, for technical support, and the University also assisted in meeting the publication costs of this article.
Copyright:
Copyright 2012 Elsevier B.V., All rights reserved.
PY - 2012/11/25
Y1 - 2012/11/25
N2 - In this paper, the effect of Mn in the CuMn alloy was investigated. And an optimized concentration of Mn in CuMn alloy used as barrier layers was also determined. The electrical and material properties of Copper (Cu) (0.1-10 at.% Mn) alloy and pure Cu films deposited on silicon oxide (SiO 2)/silicon (Si) are researched. A diffusion barrier layer was self-formed at the interface during annealing, and the growth behavior followed a logarithmic rate law. The microstructures of the Cu-Mn films were analyzed by transmission electron microscopy (TEM), and then correlated with the electrical properties of the Cu-Mn films. After annealing, several Cu alloys and pure Cu films appeared to aggregate and the resistance of the films increased. The Cu atoms diffused into the dielectric layers after annealing at 500 °C under vacuum condition. However, no agglomeration and Cu were found in the SiO 2 layer using Cu-Mn alloy with an appropriate amount of Mn, suggesting that a MnSi xO y layer is a suitable barrier for Cu. In the experiment, we found that Mn concentration is one of the key factors in the semiconductor process, and the Cu-5 at.% Mn film demonstrates the best barrier properties.
AB - In this paper, the effect of Mn in the CuMn alloy was investigated. And an optimized concentration of Mn in CuMn alloy used as barrier layers was also determined. The electrical and material properties of Copper (Cu) (0.1-10 at.% Mn) alloy and pure Cu films deposited on silicon oxide (SiO 2)/silicon (Si) are researched. A diffusion barrier layer was self-formed at the interface during annealing, and the growth behavior followed a logarithmic rate law. The microstructures of the Cu-Mn films were analyzed by transmission electron microscopy (TEM), and then correlated with the electrical properties of the Cu-Mn films. After annealing, several Cu alloys and pure Cu films appeared to aggregate and the resistance of the films increased. The Cu atoms diffused into the dielectric layers after annealing at 500 °C under vacuum condition. However, no agglomeration and Cu were found in the SiO 2 layer using Cu-Mn alloy with an appropriate amount of Mn, suggesting that a MnSi xO y layer is a suitable barrier for Cu. In the experiment, we found that Mn concentration is one of the key factors in the semiconductor process, and the Cu-5 at.% Mn film demonstrates the best barrier properties.
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U2 - 10.1016/j.jallcom.2012.06.093
DO - 10.1016/j.jallcom.2012.06.093
M3 - Article
AN - SCOPUS:84865286750
SN - 0925-8388
VL - 542
SP - 118
EP - 123
JO - Journal of Alloys and Compounds
JF - Journal of Alloys and Compounds
ER -