A study on crystallization, optical and electrical properties of the advanced ZITO thin films using co-sputtering system

K. J. Chen; F. Y. Hung; S. J. Chang; S. P. Chang; Y. C. Mai; Z. S. Hu

doi:10.1016/j.jallcom.2010.12.155

A study on crystallization, optical and electrical properties of the advanced ZITO thin films using co-sputtering system

K. J. Chen, F. Y. Hung, S. J. Chang, S. P. Chang, Y. C. Mai, Z. S. Hu

研究成果: Article › 同行評審

12 引文斯高帕斯（Scopus）

摘要

Multi-functions (conductor, semiconductor and insulator) ZnInSnO (ZITO) transparent oxide thin films have been obtained by a co-sputtering system using ITO target and ZnO target with oxygen gas contents (0-8%). The ZITO film containing a small ITO content had the lowest resistivity (good electron mobility) and higher optical transmittance. In addition, the influences of thermal treatments (post-annealing and substrate temperature) on electrical properties and optical transmittance of ZITO films were studied. Photoluminescence (PL) of the ZITO film confirmed the contribution of ITO content and oxygen gas content on the photo-emission. The ZITO film with zinc atomic concentration of 58 at.% was a good candidate for TCO material (3.08 × 10^-4 Ω cm). Under the substrate temperature of 100 °C or post-annealing temperature of 200 °C, the properties of ZITO film could be improved.

原文	English
頁（從 - 到）	3667-3671
頁數	5
期刊	Journal of Alloys and Compounds
卷	509
發行號	8
DOIs	https://doi.org/10.1016/j.jallcom.2010.12.155
出版狀態	Published - 2011 2月 24

All Science Journal Classification (ASJC) codes

材料力學
機械工業
金屬和合金
材料化學

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10.1016/j.jallcom.2010.12.155

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title = "A study on crystallization, optical and electrical properties of the advanced ZITO thin films using co-sputtering system",

abstract = "Multi-functions (conductor, semiconductor and insulator) ZnInSnO (ZITO) transparent oxide thin films have been obtained by a co-sputtering system using ITO target and ZnO target with oxygen gas contents (0-8%). The ZITO film containing a small ITO content had the lowest resistivity (good electron mobility) and higher optical transmittance. In addition, the influences of thermal treatments (post-annealing and substrate temperature) on electrical properties and optical transmittance of ZITO films were studied. Photoluminescence (PL) of the ZITO film confirmed the contribution of ITO content and oxygen gas content on the photo-emission. The ZITO film with zinc atomic concentration of 58 at.% was a good candidate for TCO material (3.08 × 10-4 Ω cm). Under the substrate temperature of 100 °C or post-annealing temperature of 200 °C, the properties of ZITO film could be improved.",

author = "Chen, {K. J.} and Hung, {F. Y.} and Chang, {S. J.} and Chang, {S. P.} and Mai, {Y. C.} and Hu, {Z. S.}",

note = "Funding Information: The authors are grateful to National Cheng Kung University , the Center for Micro/Nano Science and Technology ( D99-2700 ) and NSC 99-2221-E-006-132 and NSC 99-2622-E-033-CC3 for the financial support. Copyright: Copyright 2011 Elsevier B.V., All rights reserved.",

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AU - Chen, K. J.

AU - Hung, F. Y.

AU - Chang, S. J.

AU - Chang, S. P.

AU - Mai, Y. C.

AU - Hu, Z. S.

N1 - Funding Information: The authors are grateful to National Cheng Kung University , the Center for Micro/Nano Science and Technology ( D99-2700 ) and NSC 99-2221-E-006-132 and NSC 99-2622-E-033-CC3 for the financial support. Copyright: Copyright 2011 Elsevier B.V., All rights reserved.

PY - 2011/2/24

Y1 - 2011/2/24

N2 - Multi-functions (conductor, semiconductor and insulator) ZnInSnO (ZITO) transparent oxide thin films have been obtained by a co-sputtering system using ITO target and ZnO target with oxygen gas contents (0-8%). The ZITO film containing a small ITO content had the lowest resistivity (good electron mobility) and higher optical transmittance. In addition, the influences of thermal treatments (post-annealing and substrate temperature) on electrical properties and optical transmittance of ZITO films were studied. Photoluminescence (PL) of the ZITO film confirmed the contribution of ITO content and oxygen gas content on the photo-emission. The ZITO film with zinc atomic concentration of 58 at.% was a good candidate for TCO material (3.08 × 10-4 Ω cm). Under the substrate temperature of 100 °C or post-annealing temperature of 200 °C, the properties of ZITO film could be improved.

AB - Multi-functions (conductor, semiconductor and insulator) ZnInSnO (ZITO) transparent oxide thin films have been obtained by a co-sputtering system using ITO target and ZnO target with oxygen gas contents (0-8%). The ZITO film containing a small ITO content had the lowest resistivity (good electron mobility) and higher optical transmittance. In addition, the influences of thermal treatments (post-annealing and substrate temperature) on electrical properties and optical transmittance of ZITO films were studied. Photoluminescence (PL) of the ZITO film confirmed the contribution of ITO content and oxygen gas content on the photo-emission. The ZITO film with zinc atomic concentration of 58 at.% was a good candidate for TCO material (3.08 × 10-4 Ω cm). Under the substrate temperature of 100 °C or post-annealing temperature of 200 °C, the properties of ZITO film could be improved.

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A study on crystallization, optical and electrical properties of the advanced ZITO thin films using co-sputtering system

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