A study on electric properties for pulse laser annealing of ITO film after wet etching

C. J. Lee, H. K. Lin, C. H. Li, L. X. Chen, C. C. Lee, C. W. Wu, J. C. Huang

研究成果: Article同行評審

29 引文 斯高帕斯(Scopus)

摘要

The electric properties of ITO thin film after UV or IR laser annealing and wet etching was analyzed via grazing incidence in-plane X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectra and residual stress measurement. The laser annealing process readily induced microcracks or quasi-microcracks on the ITO thin film due to the residual tension stress of crystalline phase transformation between irradiated and non-irradiated areas, and these defects then became the preferred sites for a higher etching rate, resulting in discontinuities in the ITO thin film after the wet etching process. The discontinuities in the residual ITO thin film obstruct carrier transmission and further result in electric failure.

原文English
頁(從 - 到)330-335
頁數6
期刊Thin Solid Films
522
DOIs
出版狀態Published - 2012 十一月 1

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 表面和介面
  • 表面、塗料和薄膜
  • 金屬和合金
  • 材料化學

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