A study on sputtering of copper seed layer for interconnect metallization via molecular dynamics simulation

Engineering & Materials Science

• Sputtering 100%
• Metallizing 90%
• Molecular dynamics 87%
• Seed 80%
• Deposition rates 66%
• Copper 63%
• Crystals 51%
• Ostwald ripening 44%
• Computer simulation 42%
• Surface diffusion 40%
• Diffusion barriers 38%
• Substrates 36%
• Integrated circuits 24%
• Materials properties 21%
• Temperature 20%
• Networks (circuits) 14%

Physics & Astronomy

• seeds 72%
• sputtering 61%
• molecular dynamics 56%
• copper 55%
• Ostwald ripening 33%
• electroplating 31%
• simulation 29%
• surface diffusion 28%
• linings 28%
• crystals 25%
• integrated circuits 24%
• diffusivity 24%
• energy 23%
• voids 22%
• temperature 15%

Chemical Compounds

• Sputtering 84%
• Molecular Dynamics 57%
• Simulation 49%
• Energy 36%
• Diffusion Barrier 32%
• Ostwald Ripening 32%
• Surface Diffusion 32%
• Electrodeposition 21%
• Alloy 18%