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A successive approximation ADC with resistor-capacitor hybrid structure

研究成果: Conference contribution

9   連結會在新分頁中開啟 引文 斯高帕斯(Scopus)

摘要

This paper presents a 10-bit 50MS/s successive approximation register (SAR) ADC with low input capacitance that uses an on-chip resistive ladder to arrange a new switching scheme. The proposed arrangement not only reduces the total input capacitance, but also performs the predictive capacitor switching sequence to further reduce the power consumption. Therefore, the proposed SAR ADC has the features of small area and low power consumption. Compared to conventional SAR ADCs, the proposed ADC reduces the input capacitance to 512 fF for 10-bit resolution. This work is fabricated in TSMC 90-nm 1P9M CMOS process. This prototype chip consumes 0.703 mW from a 1.2-V supply and the ENOB is 9.3 bits at 50 MS/s sampling rate. The resultant FoM is 28 fJ/conversion-step.

原文English
主出版物標題2013 International Symposium on VLSI Design, Automation, and Test, VLSI-DAT 2013
DOIs
出版狀態Published - 2013 8月 15
事件2013 International Symposium on VLSI Design, Automation, and Test, VLSI-DAT 2013 - Hsinchu, Taiwan
持續時間: 2013 4月 222013 4月 24

出版系列

名字2013 International Symposium on VLSI Design, Automation, and Test, VLSI-DAT 2013

Other

Other2013 International Symposium on VLSI Design, Automation, and Test, VLSI-DAT 2013
國家/地區Taiwan
城市Hsinchu
期間13-04-2213-04-24

All Science Journal Classification (ASJC) codes

  • 硬體和架構
  • 電氣與電子工程

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