A theoretical analysis of temperature dependence on hydrogenated amorphous silicon thin-film transistors

Bor Yir Chen, Jiann Ruey Chen, Fenq-Lin Jenq, Chum Sam Hong

研究成果: Article同行評審

3 引文 斯高帕斯(Scopus)

摘要

The temperature dependence on current-voltage characteristics of hydrogenated amorphous silicon thin-film transistors is investigated. Experiments have been performed from 304 to 404 K, while a theoretical model is proposed to explain the experimental data. In this model, the current-voltage characteristics of hydrogenated amorphous silicon thin-film transistors are derived from the Poisson's equation in which the temperature dependence on the concentration of the localized charges, the concentration of electrons in the conduction band, and the field-effect mobility of the electrons is considered. This proposed model conforms very well to the experimental data.

原文English
頁(從 - 到)276-279
頁數4
期刊Materials Chemistry & Physics
42
發行號4
DOIs
出版狀態Published - 1995 一月 1

All Science Journal Classification (ASJC) codes

  • 材料科學(全部)
  • 凝聚態物理學

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