A theoretical analysis of temperature dependence on hydrogenated amorphous silicon thin-film transistors with the consideration of resistance of the a-Si:H film layer as a function of temperature

Bor Yir Chen, Jiann Ruey Chen, Fenq Lin Jenq, Chum Sam Hong

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

The temperature dependence on current-voltage characteristics of hydrogenated amorphous silicon thin-film transistors (a-Si:H TFTs) is investigated. Experiments have been performed from 304 to 404 K, while a theoretical model is proposed to explain the experimental data. The current-voltage characteristics of hydrogenated amorphous silicon thin-film transistors are derived from the Poisson's equation, in which the temperature dependence on the concentration of the localized charges, the concentration of electrons in the conduction band, and the field-effect mobility of electrons is considered. The work is further extended by considering the resistance of the a-Si:H film layer as a function of temperature. It is shown that the results conform the experimental data to a certain degree. And with the consideration of the resistance of the a-Si:H film layer as a function of temperature, the fitting of the theoretical model to the experimental data is much improved.

原文English
頁(從 - 到)601-606
頁數6
期刊Applied Surface Science
100-101
DOIs
出版狀態Published - 1996 七月

All Science Journal Classification (ASJC) codes

  • 化學 (全部)
  • 凝聚態物理學
  • 物理與天文學 (全部)
  • 表面和介面
  • 表面、塗料和薄膜

指紋

深入研究「A theoretical analysis of temperature dependence on hydrogenated amorphous silicon thin-film transistors with the consideration of resistance of the a-Si:H film layer as a function of temperature」主題。共同形成了獨特的指紋。

引用此