TY - GEN
T1 - A three-dimensional ZnO nanowires photodetector
AU - Lu, C. L.
AU - Chen, Y. H.
AU - Chang, S. J.
AU - Hsueh, T. J.
N1 - Publisher Copyright:
© 2016 IEEE.
Copyright:
Copyright 2017 Elsevier B.V., All rights reserved.
PY - 2016/11/21
Y1 - 2016/11/21
N2 - A ZnO-nanowire photodetector was prepared using three-dimensional through silicon via (TSV) technology. The diameter and depth of the Si via were about 80 μm and 175 μm, respectively. Cu uniformly filled in each TSV, whose average resistance was about 1 mΩ. Upon illumination with UV light (= 330 nm), it was found that measured responsivities is 7.38×10-3 A/W for the 3D TSV ZnO nanowire photodetector biased at 8 V. Furthermore, a rejection ratio of approximately 170 was obtained for the 3D TSV ZnO nanowire photodetector with an applied bias of 8 V.
AB - A ZnO-nanowire photodetector was prepared using three-dimensional through silicon via (TSV) technology. The diameter and depth of the Si via were about 80 μm and 175 μm, respectively. Cu uniformly filled in each TSV, whose average resistance was about 1 mΩ. Upon illumination with UV light (= 330 nm), it was found that measured responsivities is 7.38×10-3 A/W for the 3D TSV ZnO nanowire photodetector biased at 8 V. Furthermore, a rejection ratio of approximately 170 was obtained for the 3D TSV ZnO nanowire photodetector with an applied bias of 8 V.
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U2 - 10.1109/NANO.2016.7751326
DO - 10.1109/NANO.2016.7751326
M3 - Conference contribution
AN - SCOPUS:85006942256
T3 - 16th International Conference on Nanotechnology - IEEE NANO 2016
SP - 67
EP - 69
BT - 16th International Conference on Nanotechnology - IEEE NANO 2016
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 16th IEEE International Conference on Nanotechnology - IEEE NANO 2016
Y2 - 22 August 2016 through 25 August 2016
ER -