A three-dimensional ZnO nanowires photodetector

C. L. Lu, Y. H. Chen, S. J. Chang, T. J. Hsueh

研究成果: Conference contribution

摘要

A ZnO-nanowire photodetector was prepared using three-dimensional through silicon via (TSV) technology. The diameter and depth of the Si via were about 80 μm and 175 μm, respectively. Cu uniformly filled in each TSV, whose average resistance was about 1 mΩ. Upon illumination with UV light (= 330 nm), it was found that measured responsivities is 7.38×10-3 A/W for the 3D TSV ZnO nanowire photodetector biased at 8 V. Furthermore, a rejection ratio of approximately 170 was obtained for the 3D TSV ZnO nanowire photodetector with an applied bias of 8 V.

原文English
主出版物標題16th International Conference on Nanotechnology - IEEE NANO 2016
發行者Institute of Electrical and Electronics Engineers Inc.
頁面67-69
頁數3
ISBN(電子)9781509039142
DOIs
出版狀態Published - 2016 十一月 21
事件16th IEEE International Conference on Nanotechnology - IEEE NANO 2016 - Sendai, Japan
持續時間: 2016 八月 222016 八月 25

出版系列

名字16th International Conference on Nanotechnology - IEEE NANO 2016

Other

Other16th IEEE International Conference on Nanotechnology - IEEE NANO 2016
國家/地區Japan
城市Sendai
期間16-08-2216-08-25

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 原子與分子物理與光學

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