摘要
The authors report the growth of TiO 2 nanowires by heating the Ti/glass template and the fabrication of a TiO 2 nanowire metal-insulator-semiconductor (MIS) photodetector (PD). Compared with a TiO 2 nanowire metal-semiconductor-metal PD, it was found that we could achieve a photocurrent 29 times larger. It was also found that the dynamic response of the TiO 2 nanowire MIS PD was stable and reproducible with an on/off current contrast ratio of around 180. With an incident light wavelength of 390 nm and an applied bias of 5 V, it was found that the measured responsivity of the PD was 2.46×10 -3 A/W. Furthermore, the noise equivalent power and the detectivity of the fabricated TiO 2 nanowire MIS PD were 7.49 × 10 -12W and 8.86 × 10 11cm.Hz 0.5W -1, respectively.
原文 | English |
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文章編號 | 6313882 |
頁(從 - 到) | 1577-1579 |
頁數 | 3 |
期刊 | IEEE Electron Device Letters |
卷 | 33 |
發行號 | 11 |
DOIs | |
出版狀態 | Published - 2012 |
All Science Journal Classification (ASJC) codes
- 電子、光磁材料
- 電氣與電子工程