A unified quantum scaling length model for nanometer multiple-gate MOSFETs

Te Kuang Chiang, Ying Wen Ko, Yu Hsuan Lin, Hong Wun Gao, Yeong Her Wang

研究成果: Conference contribution

1 引文 斯高帕斯(Scopus)

摘要

Based on the zero-point energy E0 induced by one-dimensional/two-dimensional (1-D/2-D) quantum confinement effects, a unified quantum scaling length model λQM is developed for the nanometer multiple-gate (MG) MOSFETs. It indicates that the quantum scaling length λQM is sensitive to the silicon thickness and the MG MOSFETs abiding by the quantum scaling curves will well control the threshold voltage variation AVth caused by QMEs. This model not only efficiently evaluates the nanometer MG MOSFETs according to the quantum scaling factor (αQM), but also provides the basic scaling theory for the device engineer to well design the nanometer MG MOSFETs.

原文English
主出版物標題Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018
發行者Institute of Electrical and Electronics Engineers Inc.
頁面1-4
頁數4
ISBN(電子)9781538614457
DOIs
出版狀態Published - 2018 六月 22
事件7th International Symposium on Next-Generation Electronics, ISNE 2018 - Taipei, Taiwan
持續時間: 2018 五月 72018 五月 9

出版系列

名字Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018

Other

Other7th International Symposium on Next-Generation Electronics, ISNE 2018
國家/地區Taiwan
城市Taipei
期間18-05-0718-05-09

All Science Journal Classification (ASJC) codes

  • 電氣與電子工程
  • 電子、光磁材料
  • 儀器

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