A V-band CMOS direct injection-locked frequency divider using forward body bias technology

Y. T. Chen, M. W. Li, T. H. Huang, Huey Ru Chuang

研究成果: Article

25 引文 斯高帕斯(Scopus)

摘要

This letter presents a V-band direct injection-locked frequency divider (ILFD) using forward body bias technology. The divider is implemented in a 0.13 μm CMOS process. The measurements show that the free-running frequency of the divider is 28.67 GHz, the total locking range is 16.2% at 58 GHz with 3.93 mW from a low supply voltage of 0.7 V, and the measured phase noise of the divider is -123.5 dBc/Hz at 500 KHz offset. The output power of the divider is higher than -9 dBm from 54 to 61 GHz, and a good figure of merit is achieved.

原文English
文章編號5483150
頁(從 - 到)396-398
頁數3
期刊IEEE Microwave and Wireless Components Letters
20
發行號7
DOIs
出版狀態Published - 2010 七月 1

    指紋

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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