A versatile multi-gate MOSFET compact model: BSIM-MG

C. Hu, C. H. Lin, M. Dunga, D. Lu, A. Niknejad

研究成果: Conference contribution

2 引文 斯高帕斯(Scopus)

摘要

BSIM-MG is a surface-potential based compact model for multi-gate MOSFETs such as FinFETs fabricated on either SOI or bulk substrates. It can model transistors with the gate controlling two, three, or four sides of the fin. The effects of body doping are modeled. It can also model a double-gate transistor with independently biased top and bottom gates and asymmetric top and bottom gate work-functions and dielectric thicknesses. It supports high performance metal-gate technologies as well low-cost polysilicon-gate memory technologies.

原文English
主出版物標題2007 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2007, Technical Proceedings
頁面512-514
頁數3
出版狀態Published - 2007 八月 24
事件2007 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2007 - Santa Clara, CA, United States
持續時間: 2007 五月 202007 五月 24

出版系列

名字2007 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2007, Technical Proceedings
3

Other

Other2007 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2007
國家/地區United States
城市Santa Clara, CA
期間07-05-2007-05-24

All Science Journal Classification (ASJC) codes

  • 機械工業

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