A W-band Push-Push VCO with Gm-Boosted Colpitts Topology in 90-nm CMOS Technology

San Hsien Liu, Chen Ming Hung, Huey Ru Chuang, Tzuen Hsi Huang

研究成果: Conference contribution

摘要

This paper presents a W-band push-push VCO design and implementation in 90-nm CMOS technology, which is expected to be used for a 94-GHz RF transceiver. The proposed VCO adopts a differential Colpitts topology with the drain to source (DS) feedback operating at fundamental frequency. This VCO is biased by a current-switching transistor pair with dynamic forward-body biasing technique. Thus, the negative conductance of VCO can be enhanced for reliable start-up. A greater W-band signal can be obtained by a gm-boosted doubler. In addition, the current-reuse technique realizes low power design. The center frequency of proposed VCO is 90.1 GHz with the tuning range of 2.24 %. This VCO provides the highest frequency of 91.11 GHz and the corresponding output power of-0.2 dBm. The VCO consumes 25.43 mW from a 1.8-V supply and exhibits the phase noise of-109.22 dBc/Hz and FOM of-174.3 at 10 MHz offset.

原文English
主出版物標題2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9781665433914
DOIs
出版狀態Published - 2021 八月 25
事件2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021 - Hualien, Taiwan
持續時間: 2021 八月 252021 八月 27

出版系列

名字2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021

Conference

Conference2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021
國家/地區Taiwan
城市Hualien
期間21-08-2521-08-27

All Science Journal Classification (ASJC) codes

  • 電腦網路與通信
  • 電氣與電子工程
  • 儀器

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