A ZnO-based MOSFET with a photo-CVD SiO2 gate oxide

S. J. Young, L. W. Ji, S. J. Chang, T. H. Meen, K. J. Chen

研究成果: Article同行評審

4 引文 斯高帕斯(Scopus)

摘要

We demonstrate that a high quality SiO2 was successfully deposited onto ZnO by photochemical vapor deposition (photo-CVD). ZnO-based metal-oxide-semiconductor field effect transistors (MOSFETs) were also fabricated with such a photo-CVD oxide as the insulating layer. As compared with similar structure of ZnO-based metal-semiconductor FETs (MESFETs), it can be found that the gate leakage current was decreased to more than three orders of magnitude by inserting the photo-CVD oxide layer between ZnO and gate metal. With the 2 νm gate length, we also found that the saturated Ids and maximum Gm of the fabricated ZnO-based MOSFET were 61.1 mA mm-1 and 10.2 mS mm-1, respectively.

原文English
文章編號035010
期刊Semiconductor Science and Technology
24
發行號3
DOIs
出版狀態Published - 2009

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 電氣與電子工程
  • 材料化學

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