摘要
In this paper, we report the growth of high-density single crystalline ZnO nanowires on patterned ZnO:Ga/SiO2/Si templates. A humidity sensor was then fabricated using the randomly oriented nanowires bridged across two electrodes. By measuring current-voltage characteristics of the fabricated device at 80°C, it was found that measured resistances were 5.9×105, 4.3×105, 3.7×105 and 3.2×105Ω when measured with 25%, 50%, 70% and 90% relative humidity, respectively.
原文 | English |
---|---|
頁(從 - 到) | 772-778 |
頁數 | 7 |
期刊 | Superlattices and Microstructures |
卷 | 47 |
發行號 | 6 |
DOIs | |
出版狀態 | Published - 2010 6月 |
All Science Journal Classification (ASJC) codes
- 一般材料科學
- 凝聚態物理學
- 電氣與電子工程