A ZnO nanowire-based humidity sensor

Sheng Po Chang; Shoou Jinn Chang; Chien Yuan Lu; Meng Ju Li; Cheng Liang Hsu; Yu Zung Chiou; Ting Jen Hsueh; I. Cherng Chen

doi:10.1016/j.spmi.2010.03.006

A ZnO nanowire-based humidity sensor

Sheng Po Chang
, Shoou Jinn Chang
, Chien Yuan Lu
, Meng Ju Li
, Cheng Liang Hsu
, Yu Zung Chiou
, Ting Jen Hsueh
, I. Cherng Chen

研究成果: Article › 同行評審

132 引文斯高帕斯（Scopus）

摘要

In this paper, we report the growth of high-density single crystalline ZnO nanowires on patterned ZnO:Ga/SiO₂/Si templates. A humidity sensor was then fabricated using the randomly oriented nanowires bridged across two electrodes. By measuring current-voltage characteristics of the fabricated device at 80°C, it was found that measured resistances were 5.9×10⁵, 4.3×10⁵, 3.7×10⁵ and 3.2×10⁵Ω when measured with 25%, 50%, 70% and 90% relative humidity, respectively.

原文	English
頁（從 - 到）	772-778
頁數	7
期刊	Superlattices and Microstructures
卷	47
發行號	6
DOIs	https://doi.org/10.1016/j.spmi.2010.03.006
出版狀態	Published - 2010 6月

All Science Journal Classification (ASJC) codes

一般材料科學
凝聚態物理學
電氣與電子工程

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10.1016/j.spmi.2010.03.006

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title = "A ZnO nanowire-based humidity sensor",

abstract = "In this paper, we report the growth of high-density single crystalline ZnO nanowires on patterned ZnO:Ga/SiO2/Si templates. A humidity sensor was then fabricated using the randomly oriented nanowires bridged across two electrodes. By measuring current-voltage characteristics of the fabricated device at 80°C, it was found that measured resistances were 5.9×105, 4.3×105, 3.7×105 and 3.2×105Ω when measured with 25\%, 50\%, 70\% and 90\% relative humidity, respectively.",

author = "Chang, \{Sheng Po\} and Chang, \{Shoou Jinn\} and Lu, \{Chien Yuan\} and Li, \{Meng Ju\} and Hsu, \{Cheng Liang\} and Chiou, \{Yu Zung\} and Hsueh, \{Ting Jen\} and Chen, \{I. Cherng\}",

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AU - Chang, Sheng Po

AU - Chang, Shoou Jinn

AU - Lu, Chien Yuan

AU - Li, Meng Ju

AU - Hsu, Cheng Liang

AU - Chiou, Yu Zung

AU - Hsueh, Ting Jen

AU - Chen, I. Cherng

PY - 2010/6

Y1 - 2010/6

N2 - In this paper, we report the growth of high-density single crystalline ZnO nanowires on patterned ZnO:Ga/SiO2/Si templates. A humidity sensor was then fabricated using the randomly oriented nanowires bridged across two electrodes. By measuring current-voltage characteristics of the fabricated device at 80°C, it was found that measured resistances were 5.9×105, 4.3×105, 3.7×105 and 3.2×105Ω when measured with 25%, 50%, 70% and 90% relative humidity, respectively.

AB - In this paper, we report the growth of high-density single crystalline ZnO nanowires on patterned ZnO:Ga/SiO2/Si templates. A humidity sensor was then fabricated using the randomly oriented nanowires bridged across two electrodes. By measuring current-voltage characteristics of the fabricated device at 80°C, it was found that measured resistances were 5.9×105, 4.3×105, 3.7×105 and 3.2×105Ω when measured with 25%, 50%, 70% and 90% relative humidity, respectively.

UR - https://www.scopus.com/pages/publications/77953326011

UR - https://www.scopus.com/pages/publications/77953326011#tab=citedBy

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DO - 10.1016/j.spmi.2010.03.006

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SN - 0749-6036

VL - 47

SP - 772

EP - 778

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

IS - 6

ER -

A ZnO nanowire-based humidity sensor

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